GHZ 10AM11 Datasheet

10AM11

11 Watts, 20 Volts, Class A

Linear to 1000 MHz

GENERAL DESCRIPTION

The 10AM11 is a COMMON EMITTER transistor capable of providing 11
Watts of Class A, RF output power to1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 41 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 4.0 Amps

Ma ximum Temperatures

Storage Temperature - 65 to +150 C
Operating Junction Temperature +200 C

ELECTRICAL CHARACTERISTICS @ 25 C

o

o
o

O

CASE OUTLINE

55CX, STYLE 2

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg
Ft
VSWR

Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance

F = 1.0 GHz
Ic = 1.8 A
Vcc = 20 Volts
Vce = 20 V, Ic =1.8 A

11.0

8.5

2.0

14.0

9.0

2.5

1.55

30:1

Watts
Watts

GHz

dB

BVebo
BVces
BVceo
H

FE

Cob

θ

jc

Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance

Ie = 12 mA
Ic = 120 mA
Ic = 120 mA
Vce = 5 V, Ic = 800 mA
Vcb = 28V, f =1.0 MHz

3.5
50
24
20

20

2.5 4.25

Volts
Volts
Volts

pF

o

C/W

Issue February 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

10AM11

Typical Performance