GHZ 10A015 Datasheet

10A015

1.5 Watts, 20 Volts, Class A
Linear to 1000 MHz

GENERAL DESCRIPTION

The 10A015 is a COMMON EMITTER transistor capable of providing 1.5
Watts of Class A, RF Output power to 1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 6 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 750 mA

Ma ximum Temperatures

Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout

Pin
Pg
Ft
VSWR

Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance

o

o

o

O

F = 1 GHz
Ic = 220 mA
Vcc = 20 Volts
Vce = 20V, Ic =220 mA

CASE OUTLINE

55FT, STYLE 2

1.5

0.19

9.0

2.7

9.5

30:1

Watts
Watts

GHz

dB

BVebo
BVces
BVceo
h

FE

Cob

θ

jc

Issue February 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance

Ie = 1 mA
Ic = 10 mA
Ic = 10 mA
Vce = 5 V, Ic =100 mA
Vcb = 5 V, f = 1 MHz

3.5
50
24
20

3.8
20 29

Volts
Volts
Volts

pF

o

C/W

Typical Performance

10A015
10A015 (20V , 0.22A)