GHZ 1090MP Datasheet

1090 MP

90 Watts, 50 Volts, Pulsed

Avionics 1025 - 1150 MHz

GENERAL DESCRIPTION

The 1090MP is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 1025-1150 MHz. The transistor
includes input prematch for broadband capability. The device has gold thin­film metallization for proven highest MTTF. Low thermal resistance package
reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 250 Watts Peak

Maximum Voltage and Current

BVces Collector to Emitter Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 6.0 Amps Peak

Ma ximum Temperatures

Storage Temperature - 65 to +150 C
Operating Junction Temperature + 200 C

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST

Pout
Pin
Pg

η

c

VSWR

Broadband Power Out
Power Input
Broadband Power Gain
Collector Efficiency
Load Mismatch Tolerance

o2

o
o

O

CONDITIONS

F = 1025-1150 MHz
Vcc = 50 Volts
PW = 10 µsec
DF =1%
F = 1090 MHz

CASE OUTLINE

55FU, STYLE 1

MIN TYP MAX UNITS

90

8.0
35

98

8.5

38

14

10:1

Watts
Watts

d B

%

BVebo
BVces
Cob
h

FE

1

jc

θ

Note1: At Rated Power Output and pulse conditions

2: Maximum Ratings are for RF Amplifier Operation

Issue Aug 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

Emitter to Base Breakdown
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance

Ie = 1 mA
Ie = 10 mA
Vcb = 50 V
Ic= 500mA,Vcc= 5V

(

Tc=25

C

.

3.5
65

15

16

120

0.6

Volts
Volts

pF

o

C/W

1090 MP

August 1996

GHz TECHNOLOGY INC. RESERVE S THE RIGHT TO MAK E CHANGES WITHOUT FURTHER NOTICE. GHz RE COM MENDS THAT BEFORE
TH E PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakm ead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120