GHZ 1075MP Datasheet
1075 MP
75 Watt, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1075 MP is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 1025-1150 MHz. The device has gold
thin-film metallization for proven highest MTTF. The transistor includes
input prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 250 Watts Pk
Maximum Voltage and Current
BVces Collector to Emitter Voltage 65 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 6.5 Amps Pk
Ma ximum Temperatures
Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
o2
o
o
O
F= 1025-1150 MHz
Vcc = 50 Volts
PW = 10 µsec
DF = 1%
F = 1090 MHz
CASE OUTLINE
55FU, STYLE 1
75
13
7.5 9.0
40
20:1
Watts
Watts
dB
%
BVebo
BVces
Hfe
Cob
2
θ
jc
Initial Issue June, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC Current Gain to Emitter
Output Capacitance
Thermal Resistance
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Ie = 5 mA
Ic = 15mA
Vce = 5V, Ic = 100 mA
Vcb = 50 V, f = 1 MHz
Pulsed
3.5
65
20
45 50
0.6
Volts
Volts
pF
o
C/W
1075 MP
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