GHZ 1014-2 Datasheet
1014 - 2
2 Watt - 28 Volts, Class C
Microwave 1000 - 1400 MHz
GENERAL DESCRIPTION CASE OUTLINE
The 1014-2 is a COMMON BASE transistor capable of providing 2 Watts of
Class C, RF Output Power over the band 1000-1400 MHz. This transistor is
designed for Microwave Broadband Class C amplifier applications. It includes
Input prematching and utilizes gold metalization and diffused ballasting to
provide high reliagility and supreme ruggedness.
55LT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 9.7 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 0.5 A
Ma ximum Temperatures
Storage Temperature - 65 to +150 C
Operating Junction Temperature +200 C
ELECTRICAL CHARACTERISTICS @ 25 C
o
o
o
O
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out F =1000-1400 MHz
Power Input Vcb = 28 Volts
Power Gain
Collector Efficiency As Above
1
Load Mismatch Tolerance Pout = 2 Watts
2 Watt
0.35 Watt
7.5 dB
45 %
10:1
BVces
BVebo
Icbo
h
FE
Cob
θ
jc
Rev A, Feb 1997
Ghz TECHNOLOGY, INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT
THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
Collector to Emitter Breakdown Ic = 20 mA 50 Volts
Emitter to Base Breakdown Ie = 5 mA 3.5 Volts
Collector to Base Current Vcb = 28 Volts 0.5 mA
Current Gain 10 100
Output Capacitance 4.5 pF
Thermal Resistance 18 C/W
Vce = 28 V, Ic = 100 mA
Vcb = 25 V, f = 1 MHz
o
Tc = 25 C
o
Ghz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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