1004MP
4 Watts, 35 Volts, Pulsed
Avionics - 960-1215 MHz
GENERAL DESCRIPTION
The 1004MP is a COMMON BASE transistor capable of providing 4 Watts
of Pulsed, RF output power in the band 960 to 1215 MHz. This transistor is
specifically designed for pulsed Avionics amplifier applications. It utilizes
gold metalization andlow thermal resistance packaging to provide high
reliability and supreme ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 7 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 50 Volts
BVebo Emitter to Base Voltage 3.5 Volts
Ic Collector Current 300 mAmps
Ma ximum Temperatures
Storage Temperature - 40 to + 150 C
Operating Junction Temperature + 200 C
ELECTRICAL CHARACTERISTICS @ 25 C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout
Pin
Pg
η
c
VSWR
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
o
o
o
O
F = 1090 MHz
Vcc = 35 Volts
PW = 10µs, DF = 1%
CASE OUTLINE
55FU, STYLE 1
Common Base
4.0
7.0
40
4.5
9.0
45
0.5
30:1
Watts
Watts
dB
%
BVebo
BVces
h
FE
Cob
θ
jc
Issue May 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC Current Gain
Capacitance
Thermal Resistance
Ie = 1 mA
Ic =10 mA
Vce = 5 V, Ic = 100 mA
Vcb = 28V, f = 1 MHz
3.5
50
20
3.3 5.0
25
Volts
Volts
pF
o
C/W