GHZ 0912-7 Datasheet

0912-7

7 Watts, 50 Volts, Pulsed

Avionics 960 - 1215 MHz

GENERAL DESCRIPTION CASE OUTLINE

The 0912-7 is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 960-1215 MHz. The transistor
includes input prematch for broadband capability. The device has gold thin­film metallization for proven highest MTTF. Low thermal resistance
package reduces junction temperature, extends life.

55CX, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C 50 Watts

Maximum Voltage and Current

BVces Collector to Emitter Voltage 60 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 1.0 Amps

Maxi mu m T emperatures

Storage Temperature - 65 to + 150 C
Operating Junction Temperature + 200 C

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ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL CHARACTERISTICS TEST MIN TYP MAX UNITS

CONDITIONS

Pout
Pin
Pg

η

c

VSWR

BVebo
BVces
Cob
h

FE

2

θ

jc

Note1: At Rated Power Output and pulse conditions

2: At rated pulse conditions

Issue A February 20, 1998

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz R E C OMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

Power Out F = 960-1215 MHz 7 Watts
Power Input Vcc = 50 Volts 1 Watts
Power Gain 8.5 d B
Collector Efficiency (1090 MHz) 40 %
Load Mismatch Tolerance 10:1

Emitter to Base Breakdown Ie = 10 mA 4 Volts
Collector to Emitter Breakdown Ic = 20 mA 60 Volts
Capacitance Collector to Base Vcb = 50 V 6.5 8 pF
DC - Current Gain Ic= 100 mA, Vcc= 5V 10 120
Therma l Resistance 3.5 C /W

PW = 10 µsec
DF =1%
F = 1090 MHz

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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

0912-7