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FSsmIndustrialROSeries_EN.doc Sep-13
S-Series, Thin-film membrane (TFM*)
A-Series, Thin-film membrane (TFM*)
Average
permeate flow
gpd (m3/day)
1,2
Average NaCl
rejection
1,2
Minimum NaCl
rejection
1,2
Maximum Operating Pressure
1,200psi (8,276kPa) if T<77°F (25°C)
580psi (4,000kPa) if T>77°F (25°C)
Continuous operation: 122°F (50°C)
Clean-In-Place (CIP): 122°F (50°C)
Optimum rejection: 5.5-7.0,
Continuous operation: 2.0-10.0,
Clean-In-Place (CIP): 1.0-11.5
Over an element: 15psi (103kPa)
Per housing: 60psi (414kPa)
500+ ppm hours,
dechlorination recommended
Industrial RO Series
Industrial High Pressure Brackish Water RO Elements
The S-Series proprietary thin-film reverse osmosis
membrane is used in the Industrial RO3 elements. It is
characterized by high sodium chloride rejection and a
smooth, fouling-resistant membrane surface.
The A-Series proprietary thin-film reverse osmosis
membrane is used in the Industrial RO5 elements. It is
characterized by high sodium chloride rejection and a
high permeability.
Industrial RO Brackish Water Elements are used for
concentration of wastewater streams with a high osmotic pressure or a high level of solids. They can also
be used to concentrate diluted acids.
These elements feature a 30mil or 50mil spacer in a
high pressure compatible element assembly.
Table 1: Element Specification
Figure 1a: Element Dimensions Diagram (Female) - 8040
Figure 1b: Element Dimensions Diagram (Male) - 4040
Table 2: Dimensions and Weight
1
Average salt rejection after 24h operation. Individual flow rate may vary ±25%.
2
Testing conditions: 2,000ppm NaCl solution at 425psi (2,930kPa) operating pres-
sure for RO3 and 225psi (1,550kPa) for RO5, 77°F, pH6.5 and 15% recovery.
1
These elements are dried then bagged before shipping.
2
Internal diameter unless specified OD (outside diameter).
3
The element diameter (dimension C) is designed for optimum performance in GE
pressure vessels. Other pressure vessel dimension and tolerance may result in
excessive bypass and loss of capacity
Table 3: Operating and CIP Parameters