2
520 - 67 - 01
R
F =
1M
10µA
R1
1k
680pF
C1
1.0
V
IN
R
S
3k92
V
OUT
R2
10
a
b
c
S1
a
b
c
d
a
b
c
1µA
V
CC
1.3V
1µF
S3
V
10µA
S2
R
F
= 392k
180mV
RMS
at 1kHz
0.4V
DC
+
A
GS563
6
2
7
3
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
Amplifier Current I
AMP
30 54 80 µA
Bias Voltage (Pin 3) V
Q3
475 550 675 mV
Bias Current (Pin 3) I
BIAS
See Note 1 -50 0 50 nA
Output Voltage V
OH
S1 = c, S2 = b, S3 = b 200 590 - mV
Swing - High (Pin 3) See Note 2
Output Voltage V
OL
S1 = b, S2 = b, S3 = c 200 258 - mV
Swing - Low (Pin 3) See Note 3
Open Loop Gain A
OL
S1 = d, S2 = c, See Note 4 45 55 - dB
Input Referred Noise I.R.N. Aweight S1 = d, S2 = c - 1.0 2.5 µV
Distortion THD S1 = d, S2 = c, V
OUT
<100 mV
RMS
- 0.64 1.0 %
Supply Rejection P
SRR
Open Loop
6 11 - dB
All switch positions remain as shown in Test Schematic unless otherwise stated. VP is the actual voltage measured on the pin at given condition.
V
Q
- quiescent (unbias) voltage measured on the pad (nothing connected to the pin)
Note: 1. I
BIAS
= (VP3 [S2 = b] - VQ3) /1M
2. V
OH
= V
P6
- V
Q6
3. VOL= VQ6 - V
P6
4. AOL= 20 log (1 + RF / RS) - (20 log ( (RF / RS) (1 / (1 + R1 / R2) ) (VIN / V
OUT
) - 1) )
ELECTRICAL CHARACTERISTICS Stage = 1.3V Temperature = 25
o
C
Fig. 1 GS563 Test Circuit
PIN CONNECTIONS ABSOLUTE MAXIMUM RATINGS
PARAMETER VALUE / UNITS
Supply Voltage 5V DC
Power Dissipation 25 mW
Operating Temperature -10o to +40oC
Storage Temperature -20o to +70oC
CAUTION
CLASS 1 ESD SENSITIVITY
All resistors in ohms, all capacitors
in farads unless otherwise stated.
V
CC
OUT
GND
IN
1
45
8