General Semiconductor (Now Vishay) BC846A, BC846B, BC847A, BC847B, BC847C User Manual

BC846 THRU BC849

Small Signal Transistors (NPN)

Ratings at

SOT-23

.122 (3.1)
.118 (3.0)

.016 (0.4)

3

12

.037(0.95)

.037(0.95)

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Top View

)

.056 (1.43

max. .004 (0.1)

)

.052 (1.33

.007 (0.175)

.005 (0.125)

.102 (2.6)
.094 (2.4)

Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified

25 °C

FEATURES

♦

NPN Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.

♦

Especially suited for automatic insertion in
thick- and thin-film circuits.

These transistors are subdivided into three

♦

groups A, B and C according to their current gain. The
type BC846 is available in groups A and B, however, the
types BC847 and BC848 can be supplied in all three
groups. The BC849 is a low noise type available in groups
B and C. As complementary types, the PNP transistors

.045 (1.15)

.037 (0.95)

BC856...BC859 are recommended.

MECHANICAL DATA

Case: SOT-23 Plastic Package

Weight: approx. 0.008 g
Marking code

Type Marking

BC846A

B

BC847A

B
C

1A
1B

1E
1F

1G

Type Marking

BC848A

B
C

BC849B

C

1J
1K
1L

2B

2C

Collector-Base Voltage

Collector-Emitter Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current I

Peak Collector Current I

Peak Base Current I

Peak Emitter Current –I

Power Dissipation at TSB = 50 °C P

Junction Temperature T

Storage Temperature Range T

1)

Device on fiberglass substrate, see layout

BC846
BC847

BC848, BC849

BC846
BC847

BC848, BC849

BC846
BC847

BC848, BC849

BC846, BC847
BC848, BC849

Symbol Value Unit

V
V
V

V
V
V

V
V
V

V
V

C

CM

BM

CBO
CBO
CBO

CES
CES
CES

CEO
CEO
CEO

EBO
EBO

EM

tot

j

S

80
50
30

80
50
30

65
45
30

6
5

100 mA

200 mA

200 mA

200 mA

1)

310

150 °C

–65 to +150 °C

V
V
V

V
V
V

V
V
V

V
V

mW

5/98

BC846 THRU BC849

Ratings at

h-Parameters at V
f = 1 kHz,
Small Signal Current Gain

Input Impedance

Output Admittance

Reverse Voltage Transfer Ratio

DC Current Gain
at V

at VCE = 5 V, IC = 2 mA

Thermal Resistance Junction to Substrate
Backside

Thermal Resistance Junction to Ambient Air R

Collector Saturation Voltage
at I
at I

Base Saturation Voltage
at I
at I

Base-Emitter Voltage
at V
at V

Collector-Emitter Cutoff Current
at V
at VCE = 50 V
at VCE = 30 V
at VCE = 80 V, Tj = 125 °C
at VCE = 50 V, Tj = 125 °C
at VCE = 30 V, Tj = 125 °C

Gain-Bandwidth Product
at V

1)

Device on fiberglass substrate, see layout

ambient temperature unless otherwise specified

25 °C

= 5 V, IC = 2 mA,

CE

Current Gain Group A

Current Gain Group A

Current Gain Group A

Current Gain Group A

= 5 V, IC = 10 µA

CE

Current Gain Group A

Current Gain Group A

= 10 mA, IB = 0.5 mA

C

= 100 mA, IB = 5 mA

C

= 10 mA, IB = 0.5 mA

C

= 100 mA, IB = 5 mA

C

= 5 V, IC = 2 mA

CE

= 5 V, IC = 10 mA

CE

= 80 V

CE

= 5 V, IC = 10 mA, f = 100 MHz

CE

B
C

B
C

B
C

B
C

B
C

B
C

BC846
BC847

BC848, BC849

BC846
BC847

BC848, BC849

ELECTRICAL CHARACTERISTICS

Symbol Min. Typ. Max. Unit

h

fe

h

fe

h

fe

h

ie

h

ie

h

ie

h

oe

h

oe

h

oe

h

re

h

re

h

re

h

FE

h

FE

h

FE

h

FE

h

FE

h

FE

R

thSB

thJA

V

CEsat

V

CEsat

V

BEsat

V

BEsat

V

BE

V

BE

I

CES

I

CES

I

CES

I

CES

I

CES

I

CES

f

T

–
–
–

1.6

3.2
6
–
–
–

–
–
–

–
–
–

110
200
420

– – 320

– – 450

–
–

–
–

580
–

–
–
–
–
–
–

– 300 – MHz

220
330
600

2.7

4.5

8.7
18
30
60

1.5 · 10
2 · 10
3 · 10

90
150
270

180
290
520

90
200

700
900

660
–

0.2

0.2

0.2
–
–
–

–
–
–

4.5

8.5
15
30
60
110

–4

–

–4

–

–4

–

–
–
–

220
450
800

1)

1)

250
600

–
–

700
720

15
15
15
4
4
4

–
–
–

k

Ω

k

Ω

k

Ω

S

µ

S

µ

S

µ

–
–
–

–
–
–

–
–
–

K/W

K/W

mV
mV

mV
mV

mV
mV

nA
nA
nA

µ

A

µ

A

µ

A

BC846 THRU BC849

Ratings at

ambient temperature unless otherwise specified

25 °C

Collector-Base Capacitance
at V

= 10 V, f = 1 MHz

CB

Emitter-Base Capacitance
at V

= 0.5 V, f = 1 MHz

EB

Noise Figure
at V

= 5 V, IC = 200 µA, RG = 2 kΩ,

CE

f = 1 kHz,

∆

f = 200 Hz

BC846, BC847, BC848

at VCE = 5 V, IC = 200 µA, RG = 2 kΩ,
f = 30…15000 Hz

.30 (7.5)

.12 (3)

.04 (1)

.08 (2)
.04 (1)

.59 (15)

.03 (0.8)

.47 (12)

.08 (2)

ELECTRICAL CHARACTERISTICS

Symbol Min. Typ. Max. Unit

–3.56pF

–9–pF

–
–

–

BC849

BC849

C

C

F
F

F

CBO

EBO

2

1.2

1.4

10
4

4

dB
dB

dB

0.2 (5)

Layout for R

thJA

.06 (1.5)

.20 (5.1)

test

Dimensions in inches (millimeters)

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

66