General Semiconductor UGB8DT, UGB8CT, UGB8AT Datasheet
UGB8A T THRU UGB8DT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Volta ge - 50 to 200 Volts Forward Current - 8.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
♦ Ideally suited for use in very high frequency
switching power supplies, inverters and as a free
wheeling diode
♦ Ultrafast reverse
recovery time for high efficiency
♦ Soft recovery characteristics
♦ Excellent high temperature switching
♦ Glass passivated chip junction
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS UGB8AT UGB8BT UGB8CT UGB8DT UNITS
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 Volts
Maximum RMS voltage V
RMS
35 70 105 140 Volts
Maximum DC blocking voltage V
DC
50 100 150 200 Volts
Maximum average forward rectified current
at T
C
=100°C
I
(AV)
8.0 Amps
Peak forward surge current
8.3 ms single half sine-wave superimposed I
FSM
150.0 Amps
on rated load (JEDEC Method) at T
C
=100°C
Maximum instantaneous forward voltage at: 8.0 1.00
20A
V
F
1.20
Volts
5.0A, T
J
=150°C 0.95
Maximum DC reverse current T
C
=25°C 10.0
at rated DC blocking voltage T
C
=100°C
I
R
300.0
µA
Maximum reverse recovery time
(NOTE 1)
t
rr
20.0 ns
Maximum reverse recovery time T
J
=25°C 30.0
(NOTE 2)
TJ=100°C
t
rr
50.0
ns
Maximum recovered stored charge T
J
=25°C 20.0
(NOTE 2)
TJ=100°C
Q
rr
45.0
nC
Typical junction capacitance
(NOTE 3)
C
J
45.0 pF
Typical ther mal resistance
(NOTE 4)
R
ΘJC
4.0 °C/W
Operating junction and storage temperature range T
J
, T
STG
-55 to+150 °C
NOTES:
(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) T
rr
and Qrrmeasured at IF=8.0A, VR=30V, di/dt=50A/µs, Irr=10% I
RM
for meaurement of t
rr
(3) Measured at 1.0 MHZand applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case
Dimensions in inches and (millimeters)
-T-
SEATING
PLATE
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.027 (0.686)
0.037 (0.940)
1
2
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
0.090 (2.29)
0.110 (2.79)
0.245 (6.22)
MIN
- HEATSINK
PIN 1
K
K
0.095 (2.41)
0.100 (2.54)
K
PIN 2
0.047 (1.19)
0.055 (1.40)
TO-263AB
NEW PRODUCT NEW PRODUCT NEW PRODUCT
10/27/98
FIG. 1 - FORWARD CURRENT DERATING
CURVE
CASE TEMPERATURE, °C
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
RECOVERED STORED CHARGE/REVERSE
RECOVER Y TIME nC/ns
JUNCTION TEMPERATURE, °C
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
REVERSE VOLTAGE, V OLTS
TC=100°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TJ=100°C
TJ=25°C
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
TJ=25°C
f=1.0 MH
Z
Vsig=50mVp-p
di/dt=
20A/µs
di/dt=
150A/µs
di/dt=
100A/µs
di/dt=
50A/µs
di/dt= 150A/µs
di/dt=20A/µs
di/dt=50A/µs
di/dt=100A/µs
TJ=125°C
IF=4.0A
V
R
=30V
t
rr
Q
rr
RESISTIVE OR INDUCTIVE LOAD
RATINGS AND CHARACTERISTIC CURVES UGB8AT THRU UGB8DT
12
10
8.0
6.0
4.0
2.0
0
0 25 50 75 100 125 150 175
100
10
1
0.1
1,000
100
10
1,000
100
0.1
1
10
10
1
100
0.01
0.4
0.6
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
0.8
1.0
1.2
1.4
1.6
0.01
0
20
40
60
80
100
100
10
1
0.1
0.01
0.1
1
10
100
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