General Semiconductor UGB10FCT, UGB10GCT Datasheet
44//9988
UUGGBB1100FFCCTT AANNDD UUGGBB1100GGCCTT
UULLTTRRAAFFAASSTT SSOOFFTT RREECCOOVVEERRYY RREECCTTIIFFIIEERR
RReevveerrssee VVoollttaaggee
- 300-400 Volts
FFoorrwwaarrdd CCuurrrreenntt
- 10.0 Amperes
FFEEAATTUURREESS
♦ Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
♦ Ideally suited for free wheeling diode power factor
correction applications
♦ Soft recovery characteristics
♦ Excellent high temperature switching
♦ Optimized to reduce switching losses
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
♦ Glass passivated chip junction
MMEECCHHAANNIICCAALL DDAATTAA
CCaassee::
JEDEC TO-263AB molded plastic body
TTeerrmmiinnaallss::
Plated leads, solderable per MIL-STD-750,
Method 2026
PPoollaarriittyy::
As marked
MMoouunnttiinngg PPoossiittiioonn::
Any
MMoouunnttiinngg TToorrqquuee::
5 in. - lbs. max.
WWeeiigghhtt::
0.08 ounce, 2.24 grams
MMAAXXIIMMUUMM RRAATTIINNGGSS AANNDD EELLEECCTTRRIICCAALL CCHHAARRAACCTTEERRIISSTTIICCSS
Ratings at 25°C ambient temperature unless otherwise specified.
SSYYMMBBOOLLSS UUGGBB1100FFCCTT UUGGBB1100GGCCTT UUNNIITTSS
Maximum repetitive peak reverse voltage V
RRM
300 400 Volts
Working peak reverse voltage V
RWM
225 300 Volts
Maximum RMS voltage V
RMS
210 280 Volts
Maximum DC blocking voltage V
DC
300 400 Volts
Maximum average forward rectified current at T
C
=100°C I
(AV)
10 Amps
Peak forward surge current
8.3ms single half sine-wave superimposed I
FSM
60A Amps
on rated load (JEDEC Method) per leg
Maximum instantaneous forward voltage per leg T
J
=25°C 1.30
Volts
I
F
= 5A TJ=150°C
V
F
1.05
Maximum reverse leakage current T
J
=25°C 10
at working peak reverse voltage T
J
=100°C
I
R
200
µA
Maximum Reverse recovery time per leg at
I
F
=1.0A, di/dt=100A/µs, VR=30V, Irr=0.1 I
RM
t
rr
50 ns
Maximum reverse recovery time per leg at I
F
=0.5A, IR=1.0A, Irr=0.25A t
rr
35 ns
Maximum reverse recovery current per leg at
I
F
=5A, di/dt=50A/µs,VR=30V TC=100°C
I
RM
3.0 Amps
Maximum stored charge per leg
I
F
=2A, di/dt=20A/µs, VR=30V, Irr=0.1 I
RM
Q
rr
50 nC
Typical thermal resistance from junction to case per leg R
ΘJC
4.5 °C/W
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
NNOOTTEE::
(1) Pulse test: 300µs pulse width, 1% duty cycle
NNOOTTIICCEE::
Advanced product information is subject to change without notice
Dimensions in inches and (millimeters)
ADVANCED INFORMATION ADVANCED INFORMATION ADVANCED INFORMATION
TTOO--226633AABB
0 25 50 75 100 125 150
0
5
10
15
1 10 100
1
10
100
0.1 1 10 100 1,000
1
10
100
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.01
0.1
1
10
100
25 50 75 100 125
0
50
100
150
200
250
300
20 40 60 80 100
0.1
1
10
100
1,000
FFIIGG.. 11 --FFOORRWWAARRDD CCUURRRREENNTT DDEERRAATTIINNGG CCUURRVVEE
CASE TEMPERATURE, °C
AVERAGE FORWARD CURRENT, AMPERES
FFIIGG.. 33 -- TTYYPPIICCAALL IINNSSTTAANNTTAANNEEOOUUSS FFOORRWWAARRDD
CCHHAARRAACCTTEERRIISSTTIICCSS PPEERR LLEEGG
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
t
rr
Q
rr
FFIIGG.. 44 -- TTYYPPIICCAALL RREEVVEERRSSEE CCHHAARRAACCTTEERRIISSTTIICCSS
PPEERR LLEEGG
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
INSTANTANEOUS FORWARD CURRENT,
AMPERES
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TC=105°C
FFIIGG.. 22 -- MMAAXXIIMMUUMM NNOONN--RREEPPEETTIITTIIVVEE PPEEAAKK
FFOORRWWAARRDD SSUURRGGEE CCUURRRREENNTT PPEERR LLEEGG
PEAK FORWARD SURGE CURRENT,
AMPERES
REVERSE VOLTAGE, VOLTS
JUNCTION TEMPERATURE, °C
TJ=125°C
f=1.0 MHz
Vsig=50MVp-p
NUMBER OF CYCLES AT 60 H
Z
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FFIIGG.. 66 -- TTYYPPIICCAALL JJUUNNCCTTIIOONN CCAAPPAACCIITTAANNCCEE PPEERR LLEEGG
FFIIGG.. 55 -- RREEVVEERRSSEE SSWWIITTCCHHIINNGG CCHHAARRAACCTTEERRIISSTTIICCSS
PPEERR LLEEGG
CAPACITANCE, pF
RESISTIVE OR INDUCTIVE LOAD
@2A, 20A/µs
@5A, 50A/µs
@5A, 50A/µs
@1A, 100A/µs
@2A, 20A/µs
STORED CHARGE/REVERSE RECOVERY TIME,
nC/ns
TJ=125°C
TJ=125°C
TJ=100°C
TJ=100°C
TJ=25°C
TJ=25°C
RRAATTIINNGGSS AANNDD CCHHAARRAACCTTEERRIISSTTIICC CCUURRVVEESS UUGGBB1100FFCCTT AANNDD UUGGBB1100GGCCTT
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