General Semiconductor UG8FT, UG8GT Datasheet
UG8FT AND UG8GT
ULTRAFAST SOFT RECOVERY RECTIFIER
Reverse Voltage - 300 to 400 Volts Forward Current - 8.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
♦ Ideally suited for freewheeling diode power factor
correction applications
♦ Soft recovery characteristics
♦ Excellent high temperature switching
♦ Optimized to reduce switching losses
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
♦ Glass passivated chip junction
MECHANICAL DATA
Case: JEDEC TO-220AC molded plastic body
Terminals: Plated leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS UG8FT UG8GT UNITS
Maximum repetitive peak reverse voltage V
RRM
300 400 Volts
Working peak reverse voltage V
RWM
225 300 Volts
Maximum RMS voltage V
RMS
210 280 Volts
Maximum DC blocking voltage V
DC
300 400 Volts
Maximum average forward rectified current at T
C
=100°C I
(AV)
8.0 Amps
Peak forward surge current
8.3ms single half sine-wave superimposed I
FSM
100.0 Amps
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at I
F
= 8A
(NOTE 1)
TJ=25°C 1.30
T
J
=150°C
V
F
1.00
Volts
Maximum reverse leakage current T
C
=25°C 10
at working peak reverse voltage T
C
=100°C
I
R
350
µA
Maximum reverse recovery time at I
F
=0.5A, IR=1.0A, Irr=0.25A t
rr
35 ns
MaximumReverse recovery time at
I
F
=1.0A, di/dt=100A/µs, VR=30V, Irr=0.1 I
RM
t
rr
50 ns
Maximum reverse recovery current at
I
F
=10A, di/dt=50A/µs,VR=30V TC=100°C
I
RM
5.5 Amps
Maximum stored charge
I
F
=2A, di/dt=20A/µs, VR=30V, Irr=0.1 I
RM
Q
rr
55 nC
Typical thermal resistance from junction to case R
ΘJC
2.2 °C/W
Operating junction and storage temperature range T
J
, T
STG
-40 to+150 °C
NOTE: (1) Pulse test: 300µs pulse width, 1% duty cycle
NOTICE: Advanced product information is subject to change without notice
12/16/98
TO-220AC
Dimensions in inches and (millimeters)
ADVANCED INFORMATION
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
CASE
0.560 (14.22)
0.530 (13.46)
0.160 (4.06)
0.140 (3.56)
0.105 (2.67)
0.095 (2.41)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.410 (10.41)
0.390 (9.91)
PIN
12
0.113 (2.87)
0.103 (2.62)
0.635 (16.13)
0.625 (15.87)
0.037 (0.94)
0.027 (0.68)
0.205 (5.20)
0.195 (4.95)
0.154 (3.91)
0.148 (3.74)
DIA.
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
PIN 1
PIN 2
FIG. 1 - FORWARD CURRENT DERATING CURVE
CASE TEMPERATURE, °C
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
RECOVERED STORED CHARGE/REVERSE
RECOVERY TIME nC/ns
JUNCTION TEMPERATURE, °C
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
REVERSE VOLTAGE, VOLTS
TC=100°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TJ=100°C
TJ=25°C
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
TJ=25°C
f=1.0 MH
Z
Vsig=50mVp-p
di/dt=
20A/µs
di/dt=
150A/µs
di/dt=
100A/µs
di/dt=
50A/µs
di/dt= 150A/µs
di/dt=20A/µs
di/dt=50A/µs
di/dt=100A/µs
TJ=125°C
IF=4.0A
V
R
=30V
t
rr
Q
rr
RESISTIVE OR INDUCTIVE LOAD
RATINGS AND CHARACTERISTIC CURVES UG8FT AND UG8GT
12
10
8.0
6.0
4.0
2.0
0
0 25 50 75 100 125 150 175
100
10
1
0.1
150
125
100
75
50
25
0
1
1,000
10
100
10
1
0.1
100
0.01
0.4
0.6
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
0.8
1.0
1.2
1.4
1.6
0.01
0
20
40
60
80
100
100
10
1
0.1
1
10
100
Loading...