General Semiconductor SD103BWS, SD103AWS, SD103CWS Datasheet
SD103AWS THRU SD103CWS
SCHOTTKY DIODES
FEATURES
♦ For general purpose applications.
♦ The SD103 series is a metal-on-silicon
Schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices, steering, biasing, and coupling diodes for
fast switching and low logic level applications. Other
applications are click suppression, efficient full wave
bridges in telephone subsets, and blocking diodes in
rechargeable low voltage battery systems.
♦ This diode is also available in Mini-MELF case with the
type designation LL103A … LL103C, DO-35 case with
the type designations SD103A .. SD103C and SOD-123
case with type designations SD103W ... SD103CW.
MECHANICAL DATA
Case: SOD-323 Plastic Package
Weight: approx. 0.004g
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL VALUE UNIT
Peak Inverse Voltage SD103AWS V
RRM
40 Volts
SD103BWS V
RRM
30 Volts
SD103CWS V
RRM
20 Volts
Power Dissipation at T
amb
= 25°C P
tot
150
1)
mW
Single Cycle Surge
10 µs Square Wave
I
FSM 2 Amps
Junction Temperature T
j 125
1)
°C
Storage Temperature Range T
S – 55 to +150
1)
°C
Thermal Resistance Junction to Ambient Air R
ΘJA
650 °C/W
NOTES
(1)Valid provided that electrodes are kept at ambient temperature
max. .006 (0.15)
min. .010 (0.25)
.012 (0.3)
.076 (1.95)
.112 (2.85)
.059 (1.5)
max. .00 4 (0.1)
max. .049 (1.25)
Cathode Mark
Top View
.100 (2.55)
.065 (1.65)
.043 (1.1)
SOD-323
11/30/98
Dimensions in inches and (millimeters)
NEW PRODUCT NEW PRODUCT NEW PRODUCT
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL MIN. TYP. MAX. UNIT
Leakage Current
at V
R
= 30 V SD103AWS I
R
––5µA
at V
R
= 20 V SD103BWS I
R
––5µA
at V
R
= 10 V SD103CWS I
R
––5µA
Forward Voltage Drop
at I
F
= 20 mA V
F
– – 0.37 V
at I
F
= 200 mA V
F
– – 0.6 V
Junction Capacitance
at V
R
= 0 V, f = 1 MHz
C
tot
–50–pF
Reverse Recovery Time
at I
F
= IR = 50 mA to 200 mA, recover to 0.1 I
R
t
rr
–10–ns
SD103AWS THRU SD103CWS
RATINGS AND CHARACTERISTICS SD103AWS THRU SD103CAWS
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