General Semiconductor S2A, S2J, S2D, S2B, S2G Datasheet

S2A THRU S2M

0.160 (4.06)

0.180 (4.57)

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

0.205 (5.21)

0.220 (5.59)

0.084 (2.13)

0.096 (2.44)

0.077 (1.95)

0.086 (2.20)

0.130 (3.30)

0.155 (3.94)

MAX.

SURFACE MOUNT GLASS PASSIVATED SILICON RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.5 Amperes

DO-214AA

MODIFIED J-BEND

♦ Plastic package has Underwriters Laboratory

FEATURES

Flammability Classification 94V-0

♦ For surface mounted applications
♦ Low profile package
♦ Built-in strain relief,

ideal for automated placement

♦ Glass passivated chip junction
♦ High temperature soldering:

250°C/10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AA molded plastic body over

passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end

Dimensions in inches and (millimeters)

Weight: 0.003 ounce, 0.093 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Device marking code
Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

=100°C

at T

L

Peak forward surge current

8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) T

=100°C

L

Maximum instantaneous forward voltage at 1.5 A V
Maximum DC reverse current T

at Rated DC blocking voltage T
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance

Operating and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and junction to lead

P.C.B.mounted on 0.27 x 0.27” (7.0 x 7.0mm) copper pad areas

(NOTE 1)

(NOTE 2)

(NOTE 3)

=25°C 1.0

A

=125°C

A

SYMBOLS S2A S2B S2D S2G S2J S2K S2M UNITS

SA SB SD SG SJ SK SM

50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts

1.5 Amps

50.0 Amps

1.15 Volts

125.0

µA

2.0 µs

30.0 pF

53.0

16.0

°C/W

-55 to +150 °C

R
R

J

RRM
RMS

I

(AV)

I

FSM

C

, T

DC

F

I

R

t

rr

J

ΘJA
ΘJL

STG

4/98

1.5

50 60 70 80 90 100 110 120 130 140 150

0

0.5

1.0

0

10

30

40

50

1 10 100

20

0.4

0.6 0.8 1 1.2 1.4 1.6

0.01

0.1

1

10

0.1 1 10 100

10

100

1

020406080100

0.01

0.1

1

10

RATINGS AND CHARACTERISTIC CURVES S2A THRU S2M

FIG. 1 - FORWARD CURRENT DERATING CURVE

60 HZRESISTIVE OR
INDUCTIVE LOAD

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TL=100°C

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

AMPERES

60 HZRESISTIVE OR

AVERAGE FORWARD CURRENT,

INDUCTIVE LOAD
P.C.B.MOUNTED

0.27 x 0.27” (7.0 x 7.0mm)
COPPER PAD AREAS

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

AMPERES

TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE

MICROAMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

TJ=125°C

TJ=100°C

MICROAMPERES

Z

INSTANTANEOUS FORWARD CURRENT,

1.0

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

TJ=25°C
f=1.0 MH
Vsig=50mVp-p

JUNCTION CAPACITANCE, pF

REVERSE VOLT A GE, VOLTS

INSTANTANEOUS REVERSE CURRENT,

PERCENT OF RATED PEAK REVERSE

Z

VOLTAGE, %

TJ=25°C