General Semiconductor S1A, S1G, S1B, S1D, S1K Datasheet

S1A THRU S1M

0.157 (3.99)

0.177 (4.50)

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

MAX.

0.194 (4.93)

0.208 (5.28)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.049 (1.25)

0.065 (1.65)

SURFACE MOUNT RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere

DO-214AC

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ For surface mounted applications
♦ Low profile package
♦ Built-in strain relief, ideal for

automated placement

♦ Glass passivated chip junction
♦ High temperature soldering:

250°C/10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AC molded plastic over

passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026

Polarity: Color band denotes cathode end
Weight: 0.002 ounce, 0.064 gram

Dimensions are in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS S1A S1B S1D S1G S1J S!K S1M UNITS

Device marking code SA SB SD SG SJ SK SM
Maximum recurrent peak reverse voltage V
Maximum RMS voltage V

RRM
RMS

50 100 200 400 600 800 1000 Volts

35 70 140 280 420 560 700 Volts
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Volts
Maximum average forward rectified current

See Figure 1

I

(AV)

1.0 Amp

Peak forward surge current

8.3ms single half sine-wave superimposed on I
rated load (JEDEC Method) T

=110°C

L

Maximum instantaneous forward voltage at 1.0A V
Maximum DC reverse current T

at Rated DC blocking voltage T
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance

(NOTE 1)

(NOTE 2)

(NOTE 3)

Operating junction and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead mounted on

0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

4/98

=25°C 1.0 5.0

A

=125°C

A

R
R

J

FSM

I
t

C

ΘJA
ΘJL

, T

F

R

rr

J

STG

40.0 30.0 Amps

1.10 Volts

50.0

1.8 µs

12.0 pF

75.0 85.0

27.0 30.0

-55 to +150 °C

µA

°C/W

0 20 40 60 80 100 120 140 160

0

0.2

0.4

0.6

0.8

1.0

1.2

1 10 100

1

10

100

0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

0.01

0.1

1

10

100

0.01 0.1 1 10 100

1

10

100

0.01 0.1 1 10 100

1

10

100

1,000

0 20 40 60 80 100

0.001

0.01

0.1

1

10

100

RATING AND CHARACTERISTIC CURVES S1A THRU S1M

FIG. 1 - FORWARD CURRENT DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

AMPERES

0.2 x 0.2” (5.0 x 5.0mm)

AVERAGE FORWARD CURRENT,

THICK COPPER PAD AREAS

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS FORWARD

S1(K,M)

CHARACTERISTICS

S1(A-J)

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

T

L=110°C

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

S1(K,M)

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

S1(A-J)

Z

AMPERES

PULSE WIDTH=300µs
1% DUTY CYCLE

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORW ARD VOLTAGE, VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

TJ=25°C

TJ=25°C
f=1.0 MH

Z

Vsig=50mVp-p

MICROAMPERES

INSTANTANEOUS REVERSE CURRENT,

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 6 - TRANSIENT THERMAL IMPEDANCE

TJ=125°C

TJ=75°C

TJ=25°C

S1(K,M)

S1(A-J)

JUNCTION CAPACITANCE, pF

REVERSE VOLT AGE, VOL TS

TRANSIENT THERMAL IMPEDANCE, °C/W

UNITS MOUNTED on

0.20 x 0.20” (5.0 x 5.0mm) x 0.5 mil.
INCHES (0.013mm)
THICK COPPER LAND AREAS

t, PULSE DURATION,