General Semiconductor RS1A, RS1B, RS1G, RS1D, RS1J Datasheet

RS1A THRU RS1K

0.157 (3.99)

0.177 (4.50)

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

MAX.

0.194 (4.93)

0.208 (5.28)

0.100 (2.54)

0.110 (2.79)

0.078 (1.98)

0.090 (2.29)

0.049 (1.25)

0.065 (1.65)

SURFACE MOUNT FAST SWITCHING RECTIFIER

Reverse Voltage - 50 to 800 Volts Forward Current - 1.0 Ampere

DO-214AC

MODIFIED J-BEND

Dimensions are in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ For surface mounted applications in order to optimize

board space

♦ Low profile package
♦ Built-in strain relief, ideal for

automated placement

♦ Fast switching for high efficiency
♦ Glass passivated chip junction
♦ High temperature soldering:

250°C/10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AC molded plastic over

passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026

Polarity: Color band denotes cathode end
Weight: 0.002 ounce, 0.064 gram

SYMBOLS RS1A RS1B RS1D RS1G RS1J RS1K UNITS

Device marking code RA RB RD RG RJ RK
Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

=90°C

at T

L

RRM
RMS

I

(AV)

50 100 200 400 600 800 Volts
35 70 140 280 420 500 Volts
50 100 200 400 600 800 Volts

DC

1.0 Amp

Peak forward surge current

8.3ms single half sine-wave superimposed on I
rated load (JEDEC Method) T

=90°C

L

Maximum instantaneous forward voltage at 1.0A V
Maximum DC reverse current T

at rated DC blocking voltage T
Maximum reverse recovery time
Typical junction capacitance
Maximum thermal resistance

Operating junction and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead mounted on

P.C.B.with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

=25°C 5.0

A

=125°C

A
(NOTE 1)
(NOTE 2)
(NOTE 3)

R
R

J

FSM

I
t

C

ΘJA
ΘJL

, T

F

R

rr

J

STG

30.0 Amps

1.30 Volts

50.0
150 250 ns

10.0 7.0 pF

105.0

32.0

-55 to +150 °C

µA

°C/W

4/98

0

20 40 60 80

100

120

140

160 180

0

0.5

1.0

1.2

110100

0

10

20

30

40

50

0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

0.01

0.1

1

10

30

110100

1

10

30

0 20406080100

0.01

0.1

1

10

30

0.01 0.1 1 10

1

10

100

RATINGS AND CHARACTERISTIC CURVES RS1A THRU RS1J

FIG. 1 - FORWARD CURRENT DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TL= 90°C

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

AMPERES

AVERAGE FORWARD CURRENT,

P.C.B.MOUNTED ON 0.2 x 0.2” (5.0 x 5.0mm)
COPPER PAD AREAS

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

TJ=125°C

TJ=25°C

AMPERES

INSTANTANEOUS FORWARD CURRENT,

PULSE WIDTH=300µs
1% DUTY CYCLE

1.0

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

MICROAMPERES

INSTANTANEOUS REVERSE CURRENT,

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

Z

TJ=125°C

TJ=100°C

TJ=25°C

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

TJ=25°C
f=1.0 MH

Z

Vsig=50mVp-p

JUNCTION CAPACITANCE, pF

REVERSE VOLT AGE, VOL TS

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPED ANCE

MOUNTED ON 0.2 x 0.2” (5x5mm)
COPPER PAD AREA

TRANSIENT THERMAL IMPEDANCE (°C/W)

t, PULSE DURATION, SEC