General Semiconductor RGP02-14E, RGP02-16E, RGP02-20E, RGP02-12E Datasheet

RGP02-12E THRU RGP02-20E

0.107 (2.7)

0.080 (2.0)
DIA.

1.0 (25.4)
MIN.

1.0 (25.4)
MIN.

0.205 (5.2)

0.160 (4.1)

DIA.

0.026 (0.66)

0.023 (0.58)

®

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

Reverse Voltage - 1200 to 2000 Volts Forward Current - 0.5 Ampere

CASE STYLE GP10E

PATENTED*

Dimensions in inches and (millimeters)

*

Patent No.3,996,602 and brazed-lead assembly by Patent No. 3,930,306

Glass-plastic encapsulation technique is covered by

FEATURES

♦ Plastic package has

Underwriters Laboratory
Flammability Classification 94V-0

♦ High temperature metallurgically

bonded construction

♦ Capable of meeting environmental standards of

MIL-S-19500

♦ For use in high frequency rectifier circuits
♦ Fast switching for high efficiency
♦ Glass passivated cavity-free junctions
♦ 0.5 Ampere operation at TA=55°C with no thermal

runaway

♦ Typical IRless than 0.2µA
♦ High temperature soldering guaranteed:

350°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension

MECHANICAL DATA

Case: Molded plastic over glass body
Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.012 ounce, 0.3 gram

Ratings at 25°C ambient temperature unless otherwise specified.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

SYMBOLS -12E -14E -16E -18E -20E UNITS

Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

0.375" (9.5mm) lead length at TA=55°C

RRM
RMS

I

(AV)

DC

Peak forward surge current

8.3ms single half sine-wave superimposed I

FSM

on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 0.1A V
Maximum DC reverse current T

at rated DC blocking voltage T
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance

Operating junction and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B.mounted

4/98

(NOTE 1)

(NOTE 2)

(NOTE 3)

=25°C 5.0

A

=125°C

A

F

I

R

t

rr

C

J

R

ΘJA

R

ΘJL

J, TSTG

RGP02 RGP02 RGP02 RGP02 RGP02

1200 1400 1600 1800 2000 Volts

840 980 1120 1260 1400 Volts

1200 1400 1600 1800 2000 Volts

0.5 Amp

20.0 Amps

1.8 Volts

50.0

µA

300.0 ns

5.0 pF

65.0

30.0

°C/W

-65 to +175 °C

25 50 75 100 125 150 175

0

0.1

0.2

0.3

0.4

0.5

110100

0

5

10

15

20

25

0.8 1.0 1.2 1.4 1.6 1.8 2 2.2 2.4

0.001

0.01

0.1

1

110100

1

10

020406080100

0.01

0.1

1

10

20

RATINGS AND CHARACTERISTIC CURVES RGP02-12E THRU RGP02-20E

FIG. 1 - FORWARD CURRENT DERATING CURVE

AMPERES

0.375" (9.5mm) LEAD LENGTH

AVERAGE FORWARD RECTIFIED CURRENT,

AMBIENT TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

RESISTIVE OR
INDUCTIVE LOAD

TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TJ=TJmax.

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE

CHARACTERISTICS

TJ=125°C

Z

AMPERES

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD

VOLTA GE, VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION CAPACITANCE, pF

TJ=25°C
f=1.0 MH

Z

Vsig=50mVp-p

TJ=75°C

PERES

TJ=25°C

INSTANTANEOUS REVERSE LEAKAGE CURRENT, MICROAM-

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

REVERSE VOLTA GE, VOLTS