General Semiconductor RGF1G, RGF1J, RGF1M, RGF1A, RGF1B Datasheet

...

RGF1A THRU RGF1M

0.167 (4.24)

0.187 (4.75)

0.0065 (0.17)

0.0105 (0.27)

0.030 (0.76)

0.060 (1.52)

0.006

0.152 TYP.

0.196 (4.98)

0.226 (5.74)

0.094 (2.39)

0.114 (2.90)

0.106 (2.69)

0.118 (3.00)

0.040 (1.02)

0.060 (1.52)

0.098 (2.49)

0.108 (2.74)

SURFACE MOUNT GLASS PASSIVATED JUNCTION

FAST SWITCHING RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere

DO-214BA

MODIFIED J-BEND

PATENTED*

Dimensions in inches and (millimeters)

Patent No.3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead

Glass-plastic encapsulation technique is covered by

forming by Patent No. 5,151,846

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Ideal for surface mount automotive applications ♦ High temperature metallurgically bonded construction ♦ Glass passivated cavity-free junction ♦ Capable of meeting environmental standards of

MIL-S-19500

♦ Built-in strain relief ♦ Easy pick and place ♦ Fast switching for high efficiency ♦ High temperature soldering guaranteed:

450°C/5 seconds at terminals

♦ Complete device submersible temperature of

265°C for 10 seconds in solder bath

MECHANICAL DATA

Case: JEDEC DO-214BA molded plastic over glass body Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0048 ounce, 0.120 gram

SYMBOLS RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNITS

Device Marking Code RA RB RD RG RJ RK RM Maximum repetitive peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage V Maximum average forward rectified current

=120°C

at T

Peak forward surge current 8.3ms single half sinewave superimposed on rated load (JEDEC method)

Maximum instantaneous forward voltage at 1.0A V Maximum full load reverse current,

full cycle average, T Maximum DC reverse current T

at rated DC blocking voltage T Maximum reverse recovery time Typical junction capacitance Typical thermal resistance

(NOTE 2)

(NOTE 3)

=55°C

=25°C 5.0

=125°C I

(NOTE 1)

Operating junction and storage temperature range T

NOTES: (1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied Vr=4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead

P.C.B.mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

4/98

(AV)

FSM

R(AV)

R R

, T

RRM RMS

ΘJA ΘJL

STG

50 100 200 400 600 800 1000 Volts 35 70 140 280 420 560 700 Volts 50 100 200 400 600 800 1000 Volts

1.0 Amp

30.0 Amps

1.30 Volts

50.0 µA

100

150 250 500 ns

8.5 pF

85.0

28.0

-65 to +175 °C

µA

°C/W

110100

0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.01

0.1

0.5

100 110 120 130 140 150 160 175

110100

100

020406080100

0.01

0.1

0.01 0.1 1 10 100

0.1

100

RATINGS AND CHARACTERISTIC CURVES RGF1A THRU RGF1M

FIG. 1 - FORWARD CURRENT DERATING CURVE

60 H

RESISTIVE OR INDUCTIVE LOAD P.C.B.MOUNTED on

0.2 x 0.2” (5.0 x 5.0mm) COPPER PAD AREAS

AMPERES

AVERAGE FORWARD RECTIFIED CURRENT,

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

PULSE WIDTH=300µs 1% DUTY CYCLE

TJ=25°C

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TJ=TJ max.

8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 Hz

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

TJ=125°C

TJ=100°C

AMPERES

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORW ARD VOLTAGE, VOL TS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

JUNCTION, CAPACITANCE, pF

REVERSE VOLT AGE, VOL TS

TJ=25°C f=1.0 MH

Vsig=50mVp-p

MICROAMPERES

INSTANTANEOUS REVERSE CURRENT,

PERCENT OF RATED PEAK REVERSE VOLTAGE, %

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

MOUNTED ON 0.2 x 0.2” (5 x 7mm) COPPER PAD AREAS

TRANSIENT THERMAL IMPEDANCE (°C/W)

t, PULSE DURATION, sec

TJ=25°C