General Semiconductor NSB8AT, NSB8GT, NSB8KT, NSB8JT, NSB8BT Datasheet

NEW PRODUCT NEW PRODUCT NEW PRODUCT

-T-

SEATING

PLATE

0.380 (9.65)

0.420 (10.67)

0.320 (8.13)

0.360 (9.14)

0.575 (14.60)

0.625 (15.88)

0.027 (0.686)

0.037 (0.940)

1

2

0.160 (4.06)

0.190 (4.83)

0.045 (1.14)

0.055 (1.40)

0.018 (0.46)

0.025 (0.64)

0.080 (2.03)

0.110 (2.79)

0.090 (2.29)

0.110 (2.79)

0.245 (6.22)
MIN

- HEATSINK

PIN 1

K

K

0.095 (2.41)

0.100 (2.54)

K

PIN 2

0.047 (1.19)

0.055 (1.40)

NSB8A T THRU NSB8MT

GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 8.0 Amperes

TO-263AA

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ High forward current capability
♦ High surge current capability
♦ Low forward voltage drop
♦ Glass passivated chip junction
♦ High temperature soldering in accordance with

CECC 802 / Reflow guaranteed

MECHANICAL DATA

Case: JEDEC TO-263AA molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,

Method 2026

Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS AT BT DT GT JT KT MT UNITS

Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current at T

=100°C I

C

Peak forward surge current

8.3ms single half sine-wave superimposed on I
rated load (JEDEC Method)

Maximum instantaneous forward voltage at 8.0A V
Maximum DC reverse current

at rated DC blocking voltage T

Typical junction capacitance
Typical ther mal resistance
Operating junction and storage temperature range T

NOTES:

(1) Measured at 1.0 MHz and applied reversed voltage of 4.0 Volts
(2) Thermal resistance from junction to case mounted on heatsink

(NOTE 1)

(NOTE 2)

=25°C I

C

T

C

=100°C 100.0

J

RRM
RMS

DC

(AV)

FSM

R
, T

F

R

C

ΘJC

STG

NSB8 NSB8 NSB8 NSB8 NSB8 NSB8 NSB8

50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts

8.0 Amps

175.0 Amps

1.1 Volts

10.0 µA

J

55.0 pF

3.0 °C/W

-55 to +150 °C

4/98

0 50 100 150

0

2.0

4.0

6.0

8.0

10

110100

0

25

50

75

100

125

150

175

0.1 1 10 100 1,000

0

20

40

60

80

100

120

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

0.1

1

10

100

0 20406080100

0.1

1

10

100

RATINGS AND CHARACTERISTIC CURVES NSB8AT THRU NSB8MT

FIG.1 - FORWARD CURRENT DERATING CURVE

60 HZRESISTIVE or
INDUCTIVE LOAD

AMPERES

AVERAGE FORWARD CURRENT,

CASE TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

TJ=TJmax.

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

1.0 CYCLE

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

Z

TJ=100°C

AMPERES

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

JUNCTION CAPACITANCE, pF

MICROAMPERES

INSTANTANEOUS REVERSE CURRENT,

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

TJ=75°C

TJ=25°C

PERCENT OF RATED PEAK REVERSE

TJ=25°C
f=1.0 MH
Vsig=50mp-p

VOLTAGE, %

Z

REVERSE VOLTAGE, V OLTS