General Semiconductor MPSA93, MPSA92 Datasheet
MPSA92, MPSA93
Small Signal Transistors (PNP)
TO-92
.181 (4.6)
.181 (4.6)
min. .492 (12.5)
.022 (0.55)
∅
max.
.098 (2.5)
E
B
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
Absolute Maximum Ratings
ambient temperature unless otherwise specified
25 °C
C
.142 (3.6)
FEATURES
PNP Silicon Epitaxial Planar Tran-
♦
sistors especially suited as line
switch in telephone subsets
and in video output stages of
TV receivers and mo nitors.
As complementary types, the PNP
♦
transistors MPSA42 and MPSA43 are
recommended.
MECHANICAL DATA
TO-92 Plasti c Package
Case:
Weight:
approx. 0.18 g
Symbol Value Unit
Collector-Em itter Voltage
MPSA92
MPSA93
Collector-Base Voltage
MPSA92
MPSA93
Emitter-Base Vol tage –V
Collector Curr ent –I
Po w er Dissi pation at T
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Val id pro vided that lead are k ept at ambient temperat ure at a distance of 2 mm from case.
–V
–V
–V
–V
CEO
CEO
CBO
CBO
EBO
C
tot
j
S
300
200
300
200
V
V
V
V
5V
500 mA
1)
625
mW
150 °C
–65 to +150 °C
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
MPSA92, MPSA93
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Collector-Emit ter Breakdo wn Voltage
–I
= 10 mA, IB = 0
C
Collector-Base Breakdown V oltage
= 100 µA, IE = 0
–I
C
Emitter-Base Breakdown Voltage
= 100 µA, IC = 0
–I
E
Collector-Base Cutoff Current
= 200 V, IE = 0
–V
CB
= 160 V, IE = 0
–V
CB
Emitter-Base Cutoff Current
= 3 V, IC = 0
–V
EB
DC Current G ai n
= 1 mA, –V
–I
C
–I
= 10 mA, –V
C
= 30 mA, –V
–I
C
CE
CE
CE
= 10 V
= 10 V
= 10 V
Collector-Emit ter Saturat ion Voltage
= 20 mA, –IB = 2 mA
–I
C
Base-Emitter Saturation Voltage
= 20 mA, –IB = 2 mA
–I
C
Gain-Bandwidth Product
= 10 mA, –VCE = 20 V, f = 100 MHz
–I
C
MPSA92
MPSA93
MPSA92
MPSA93
MPSA92
MPSA93
–V
(BR)CEO
–V
(BR)CEO
–V
(BR)CBO
–V
(BR)CBO
–V
(BR)EBO
–I
CBO
–I
CBO
–I
EBO
h
FE
h
FE
h
FE
–V
CEsat
–V
BEsat
f
T
300
200
300
200
–
–
–
–
–
–
–
–
V
V
V
V
5––V
–
–
–
–
250
250
nA
nA
– – 100 nA
25
40
25
–
–
–
–
–
–
–
–
–
– – 500 mV
– – 900 mV
50 – – MHz
Collector-Ba se Capacitance
= 20 V, IE = 0, f = 1 MHz
–V
CB
Thermal Resistance Junction to Ambient Air R
1)
Va lid pro vided that lead are kept at ambient temperat ure at a distanc e of 2 mm from case.
MPSA92
MPSA93
C
C
CBO
CBO
thJA
–
–
–
–
– – 200
6
8
1)
pF
pF
K/W
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