General Semiconductor MPSA42, MPSA43 Datasheet

MPSA42, MPSA43

Small Signal Transistor s (NPN)

Ratings at

TO-92

.181 (4.6)

.181 (4.6)

min. .492 (12.5)

∅

.022 (0.55)

max.

.098 (2.5)

E

B

Dimensions in inches and (millimeters)

.142 (3.6)

C

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified

25 °C

FEATURES

♦

NPN Silicon Epitaxial Planar Transistors
especially suited as line switch in tele­phone subsets and in video output stages
of TV receivers and monitors.

As complementary types, the PNP transistors

♦

MPSA92 and MPSA93 are recommended

MECHANICAL DATA

TO-92 Plasti c Package

Case:
Weight:

approx. 0.18 g

Symbol Value Unit

Collector-Emitter Voltage

MPSA42
MPSA43

Collector-Base V oltage

MPSA42
MPSA43

Emitter-Base Voltage V
Collector Current I
Power Dissipation at T

= 25 °C P

amb

Junction Temperature T
Storage Temperature Range T

1)

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

V
V

V
V

C

CEO
CEO

CBO
CBO

EBO

tot

j

S

300
200

300
200

6V
500 mA

1)

625
150 °C
–65 to +150 °C

V
V

V
V

mW

4/98

Ratings at

ambient temperature unless otherwise specified

25 °C

MPSA42, MPSA43

ELECTRICAL CHARACTERISTICS

Symbol Min. Typ. Max. Unit

Collector-Emitt er Breakdown Voltage

= 10 mA, IB = 0

I

C

Collector-B ase Breakdown Voltage

= 100 µA, IE = 0

I

C

Emitter-Base Break down Voltage

= 100 µA, IC = 0

I

E

Collector-Base Cutoff Current
V

= 200 V, IE = 0

CB

= 160 V, IE = 0

V

CB

Emitter-Base Cutoff Current

= 6 V, IC = 0

V

EB

= 4 V, IC = 0

V

EB

DC Current Gain

= 1 mA, V

I

C

I

= 10 mA, V

C

= 30 mA, V

I

C

CE

CE
CE

= 10 V

= 10 V
= 10 V

Collector-Emitter Saturation Voltage
I

= 20 mA, IB = 2 mA

C

Base-Emitter Saturat i on Voltage

= 20 mA, IB = 2 mA

I

C

MPSA42
MPSA43

MPSA42
MPSA43

MPSA42
MPSA43

MPSA42
MPSA43

V

(BR)CEO

V

(BR)CEO

V

(BR)CBO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CBO

I

EBO

I

EBO

h

FE

h

FE

h

FE

V

CEsat

V

BEsat

300
200

300
200

–
–

–
–

–
–

–
–

V
V

V
V

6––V

–
–

–
–

25
40
40

–
–

–
–

–
–
–

100
100

100
100

–
–
–

nA
nA

nA
nA

–
–
–

––500mV

––900mV

Gain-Bandwidth Product

= 10 mA, VCE = 20 V, f = 100 MHz

I

E

Collector-Base Capacitanc e

= 20 V, IE = 0, f = 1 MHz

V

CB

MPSA42
MPSA43

Thermal Resistance Junction to Ambient Air R

1)

Val id provided that lead are kept at ambient temperature at a distance of 2 mm from case.

f

C
C

T

CBO
CBO

thJA

50 – – MHz

–
–

–
–

––2001)K/W

3
4

pF
pF