General Semiconductor MPSA06 Datasheet
MPSA06
Small Signal Transistors (NPN)
FEATURES
♦ NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
♦ As complementary type, the PNP
transistor MPSA56 is recommended.
♦ On special request, this transistor is
also manufactured in the pin configuration
TO-18.
♦ This transistor is also available in the
SOT-23 case with the type designation MMBTA06
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL VALUE UNIT
Collector-Base V oltage V
CBO
80 V
Collector-Emitter V oltage V
CEO
80 V
Emitter-Base V oltage V
EBO
4.0 V
Collector Current I
C
500 mA
Power Dissipation at T
A
= 25 °C P
tot
625 mW
at T
C
= 25 °C 1.5 W
Thermal Resistance Junction to Ambient Air R
θJA
200
(1)
K/W
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
–65 to +150 °C
1)
Valid provided that leads are kept at ambient temperature
0.181 (4.6)
min. 0.492 (12.5)
0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max.
∅
0.022 (0.55)
E
C
B
TO-92
10/27/98
Dimensions in inches and (millimeters)
NEW PRODUCT NEW PRODUCT NEW PRODUCT
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL MIN. .MAX. UNIT
Collector-Emitter Breakdown Voltage
at IC= 1 mA, IB= 0 V
(BR)CEO
80 – V
Emitter-Base Breakdown Voltage
at I
E
= 100 µA, IC= 0 V
(BR)EBO
4.0 – V
Collector-Emitter Cutoff Current
V
CE
= 60 V, IB= 0 I
CES
– 100 nA
Collector-Base Cutoff Current
V
CB
= 80 V, IE= 0 I
CBO
– 100 nA
Collector Saturation Voltage
at I
C
= 100 mA, IB= 10 mA V
CEsat
– 0.25 V
Base-Emitter On Voltage
at I
C
= 10 mA, IB= 1 mA V
BE(on)
– 1.2 V
DC Current Gain
at V
CE
= 1 V, IC= 10 mA h
FE
100 – –
at V
CE
= 1 V, IC = 100 mA h
FE
100 – –
Gain-Bandwidth Product
at V
CE
= 2.0 V, IC= 10 mA, f = 100 MHz f
T
100 – MHz
1)
Valid provided that leads are kept at ambient temperature
MPSA06
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