General Semiconductor MPS2907A Datasheet
MPS2907A
SMALL SIGNAL TRANSISTORS (PNP)
FEATURES
♦ PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
♦ On special request, this transistor is also
manufactured in the pin configuration
TO-18.
♦ This transistor is also available in the
SOT-23 case with the type designation
MMBT2907A.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL VALUE UNIT
Collector-Base Voltage –V
CBO
60 Volts
Collector-Emitter Voltage –V
CEO
60 Volts
Emitter-Base Voltage –V
EBO
5.0 Volts
Collector Current –I
C
600 mA
Power Dissipation at TA= 25°C
P
tot
625 mW
Derate above 25°C 5.0 mW/°C
Power Dissipation at TC= 25°C
P
tot
1.5 mW
Derate above 25°C 12 mW/°C
Thermal Resistance Junction to Ambient Air R
ΘJA
200 °C/W
Thermal Resistance Junction Case R
ΘJC
83.3 °C/W
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
–500 to +150 °C
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
0.181 (4.6)
min. 0.492 (12.5)
0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max.
∅
0.022 (0.55)
E
C
B
TO-92
12/16/98
Dimensions in inches and (millimeters)
PRELIMINARY PRELIMINARY PRELIMINARY
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL MIN. MAX. UNIT
Collector-Base Breakdown Voltage
at –IC= 10 µA, IE= 0
–V
(BR)CBO
60 – Volts
Collector-Emitter Breakdown Voltage
at –IC= 10 mA, IB= 0
–V
(BR)CEO
60 – Volts
Emitter-Base Breakdown Voltage
at –IE= 10 µA, IC= 0
–V
(BR)EBO
5 – Volts
Collector-Emitter Saturation Voltage
at –I
C
= 150 mA, –IB= 15 mA –V
CEsat
– 0.4 Volts
at –IC= 500 mA, –IB= 50 mA –V
CEsat
– 1.6 Volts
Base-Emitter Saturation Voltage
at –I
C
= 150 mA, –IB= 15 mA –V
BEsat
– 1.3 Volts
at –IC= 500 mA, –IB = 50 mA –V
BEsat
– 2.6 Volts
Collector Cutoff Current
at –VEB= 0.5 V, –VCE= 30 V
–I
CEX
–50nA
Collector Cutoff Current –I
CBO
µA
at –V
CB
= 50 V, IE= 0 0.01
at –VCB= 50 V, IE= 0, TA=150°C–10
Base Cutoff Current
at –VEB= 0.5 V, –VCE= 30 V
–I
BL
–50nA
DC Current Gain
at –V
CE
= 10 V, –IC = 0.1 mA h
FE
75 – –
at –V
CE
= 10 V, –IC= 1 mA h
FE
100 – –
at –V
CE
= 10 V, –IC= 10 mA h
FE
100 – –
at –V
CE
= 10 V, –IC= 150 mA h
FE
100 300 –
at –VCE= 10 V, –IC= 500 mA h
FE
50 – –
Gain-Bandwidth Product
at –VCE= 20 V, –IC= 50 mA, f = 100 MHz
f
T
200 – MHz
Output Capacitance
at –V
CB
= 10 V, f = 1 MHz, IE= 0
C
obo
– 8.0 pF
Emitter-Base Capacitance
at –V
EB
= 2.0 V, f = 1 MHz, IE= 0
C
ibo
–30pF
MPS2907A
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