General Semiconductor MPS2222A Datasheet

MPS2222A

SMALL SIGNAL TRANSISTORS (NPN)

FEATURES

¨ NPN Silicon Epitaxial Planar Transistor

for switching and amplifier applications.

¨ On special request, this transistor is

also manufactured in the pin
configuration TO-18.

¨ This transistor is also available in the

SOT-23 case with the type designation
MMBT2222A

MECHANICAL DATA

Case: TO-92 Plastic Package
Weight: approx. 0.18g

MAXIMUM RATINGS AND THERMAL CHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified

SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

75 Volts

Collector-Emitter Voltage V

CEO

40 Volts

Emitter-Base Voltage V

EBO

6.0 Volts

Collector Current-Continuous I

C

600 mA

Power Dissipation at T

A

=25°C

P

tot

625 mW

Derate above 25°C 5.0 mW/°C

Power Dissipation at T

C

=25°C

P

tot

1.5 W

Derate above 25°C 12 mW/°C

Thermal Resistance, Junction to Ambient Air R

QJA

200 °C/W

Thermal Resistance Junction to Case R

QJC

83.3 ¡C/W

Junction Temperature T

j

150 ¡C

Storage Temperature Range T

S

Ð55 to +150 ¡C

0.181 (4.6)

min. 0.492 (12.5)

0.181 (4.6)

0.142 (3.6)

0.098 (2.5)

max.



Æ

0.022 (0.55)

E

C

B

TO-92

2/22/99

Dimensions in inches and (millimeters)

ADVANCED INFORMATION

MPS2222A

ELECTRICAL CHARACTERISTICS

Ratings at 25¡C ambient temperature unless otherwise specified

SYMBOL MIN. MAX. UNIT

Collector-Base Breakdown Voltage
at IC= 10 mA, IE = 0

V

(BR)CBO

75 Ð Volts

Collector-Emitter Breakdown Voltage

(1)

at IC = 10 mA, IB = 0

V

(BR)CEO

40 Ð Volts

Emitter-Base Breakdown Voltage
at IE = 10 mA, IC = 0

V

(BR)EBO

6.0 Ð Volts

Collector-Emitter Saturation Voltage

(1)

at IC = 150 mA, IB = 15 mA V

CEsat

0.6 0.3 Volts

at IC = 500 mA, IB = 50 mA V

CEsat

Ð 1.0 Volts

Base-Emitter Saturation Voltage

(1)

at IC = 150 mA, IB= 15 mA V

BEsat

Ð 1.2 Volts

at IC = 500 mA, IB= 50 mA V

BEsat

Ð 2.0 Volts

Collector Cutoff Current I

CEX

Ð10nA

at V

EB

= 3 V, V

CE

= 60 V

Collector Cutoff Current I

CBO

Ð mA

at V

CB

= 60 V, IE = 0 0.01

at V

CB

= 50 V, IE = 0, TA=125°C 10

Emitter Cutoff Current
at V

EB

= 3 V, IC = 0

I

EBO

Ð 100 nA

Base Cutoff Current
at V

CE

= 60 V, V

EB

= 3.0 V

I

BL

Ð20nA

DC Current Gain
at V

CE

= 10 V, IC = 0.1 mA h

FE

35 Ð Ð

at V

CE

= 10 V, IC = 1 mA h

FE

50 Ð Ð

at V

CE

= 10 V, IC = 10 mA h

FE

75 Ð Ð

at V

CE

= 10 V, IC = 10 mA, TA=-55°Ch

FE

35 Ð Ð

at V

CE

= 10 V, IC = 150 mA

(1)

h

FE

100 300 Ð

at V

CE

= 1.0 V, IC = 150 mA

(1)

h

FE

50 Ð Ð

at V

CE

= 10 V, IC = 500 mA

(1)

h

FE

40 Ð Ð

Input Impedance
at V

CE

= 10 V, IC = 1 mA, f = 1 kHz h

ie

2.0 8.0 kW

at V

CE

= 10 V, IC = 10 mA, f = 1 kHz 0.25 1.25

Voltage Feedback Ratio
at V

CE

= 10 V, IC = 1 mA, f = 1 kHz h

re

Ð 8 ¥ 10

-4

Ð

at V

CE

= 10 V, IC = 10 mA, f = 1 kHz 4 ¥ 10

-4

Current Gain-Bandwidth Product
at V

CE

= 20 V, IC = 20 mA, f = 100 MHz

f

T

300 Ð MHz

Output Capacitance
at V

CB

= 10 V, f = 1 kHz, IE=0

C

OBO

Ð 8.0 pF

Input Capacitance
at V

EB

= 0.5 V, f = 1 kHz, IC=0

C

IBO

Ð25pF

NOTES

(1) Pulse test: Pulse width ² 300ms - Duty cycle ² 2%