General Semiconductor MMBT4401 Datasheet
MMBT4401
SMALL SIGNAL TRANSISTORS (NPN)
FEATURES
¨ NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
¨ As complementary type, the PNP
transistor MMBT4403 is recommended.
¨ This transistor is also available in the TO-92 case with
the type designation 2N4401.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code: 2X
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
60 Volts
Collector-Emitter Voltage V
CEO
40 Volts
Emitter-Base Voltage V
EBO
6.0 Volts
Collector Current-Continuous I
C
600 mA
Power Dissipation FR-5 Board,* T
A
=25°C
P
tot
225 mW
Derate above 25°C 1.8 mW/°C
Power Dissipation Alumina Substrate,** T
A
=25°C
P
tot
300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient FR-5 Board
R
QJA
556
°C/W
Alumina Substrate 417
Junction Temperature T
j
150 ¡C
Storage Temperature Range T
S
Ð55 to +150 ¡C
*FR-5 = 1.0 x 0.75 x 0.062 in.
**Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
.016 (0.4)
.056 (1.43
)
.037(0.95)
.037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
1
2
3
Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.118 (3.0)
.052 (1.33
)
.005 (0.125)
.094 (2.4)
.037 (0.95)
SOT-23
2/18/99
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
ADVANCED INFORMATION ADVANCED INFORMATION
MMBT4401
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL MIN. MAX. UNIT
Collector-Base Breakdown Voltage
at IC= 0.1 mA, IE = 0
V
(BR)CBO
60 Ð Volts
Collector-Emitter Breakdown Voltage
(1)
at IC = 1 mA, IB = 0
V
(BR)CEO
40 Ð Volts
Emitter-Base Breakdown Voltage
at IE = 0.1 mA, IC = 0
V
(BR)EBO
6.0 Ð Volts
Collector-Emitter Saturation Voltage
at I
C
= 150 mA, IB = 15 mA V
CEsat
Ð 0.40 Volts
at IC = 500 mA, IB = 50 mA V
CEsat
Ð 0.75 Volts
Base-Emitter Saturation Voltage
at I
C
= 150 mA, IB= 15 mA V
BEsat
0.75 0.95 Volts
at IC = 500 mA, IB= 50 mA V
BEsat
Ð 1.20 Volts
Collector Cutoff Current
at V
EB
= 0.4 V, V
CE
= 35 V
I
CEX
Ð 100 nA
Base Cutoff Current
at V
EB
= 0.4 V, V
CE
= 35 V
I
BEV
Ð 100 nA
DC Current Gain
at V
CE
= 1 V, IC = 0.1 mA h
FE
20 Ð Ð
at V
CE
= 1 V, IC = 1 mA h
FE
40 Ð Ð
at V
CE
= 1 V, IC = 10 mA h
FE
80 Ð Ð
at V
CE
= 1 V, IC = 150 mA
(1)
h
FE
100 300 Ð
at V
CE
= 2 V, IC = 500 mA
(1)
h
FE
40 Ð Ð
Input Impedance
at V
CE
= 10 V, IC = 1 mA, f = 1 kHz
h
ie
115kW
Voltage Feedback Ratio
at V
CE
= 10 V, IC = 1 mA, f = 1 kHz
h
re
0.1 ¥ 10
-4
8 ¥ 10
-4
Ð
Current Gain-Bandwidth Product
at V
CE
= 10 V, IC = 20 mA, f = 100 MHz
f
T
250 Ð MHz
Collector-Base Capacitance
at V
CB
= 5 V,f = 1 MHz, IE=0
C
CBO
Ð 6.5 pF
Emitter-Base Capacitance
at V
EB
= 0.5 V,f = 1 MHz, IC=0
C
EBO
Ð30pF
NOTES:
(1) Pulse test: pulse width ²300ms, cycle ² 2.0%
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