General Semiconductor MMBT3906 Datasheet
MMBT3906
SMALL SIGNAL TRANSISTORS (PNP)
FEATURES
¨ PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
¨ As complementary type, the NPN
transistor MMBT3904 is recommended.
¨ This transistor is also available in the TO-92 case with
the type designation 2N3906.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code: 2A
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL VALUE UNIT
Collector-Base Voltage ÐV
CBO
40 V
Collector-Emitter Voltage ÐV
CEO
40 V
Emitter-Base Voltage ÐV
EBO
5.0 V
Collector Current ÐI
C
200 mA
Power Dissipation at T
A
= 25 ¡C P
tot
225
(1)
mW
300
(2)
mW
Thermal Resistance Junction to Substrate Backside R
qSB
320
(1)
¡C/W
Thermal Resistance Junction to Ambient Air R
qJA
450
(1)
¡C/W
Junction Temperature T
j
150 ¡C
Storage Temperature Range T
S
Ð55 to +150 ¡C
NOTES:
(1) Device on fiberglass subtrate, see layout
(2) Device on alumina substrate
.016 (0.4)
.056 (1.43
)
.037(0.95)
.037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
1
2
3
Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.118 (3.0)
.052 (1.33
)
.005 (0.125)
.094 (2.4)
.037 (0.95)
SOT-23
1/5/99
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
NEW PRODUCT NEW PRODUCT NEW PRODUCT
MMBT3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL MIN. MAX. UNIT
Collector-Base Breakdown Voltage
at ÐIC= 10 mA, IE = 0 ÐV
(BR)CBO
40 Ð V
Collector-Emitter Breakdown Voltage
at ÐIC = 1 mA, IB = 0 ÐV
(BR)CEO
40 Ð V
Emitter-Base Breakdown Voltage
at ÐIE = 10 mA, IC = 0 ÐV
(BR)EBO
5ÐV
Collector Saturation Voltage
at ÐI
C
= 10 mA, ÐIB = 1 mA ÐV
CEsat
Ð 0.25 V
at ÐIC = 50 mA, ÐIB = 5 mA ÐV
CEsat
Ð 0.4 V
Base Saturation Voltage
at ÐI
C
= 10 mA, ÐIB = 1 mA ÐV
BEsat
Ð 0.85 V
at ÐIC = 50 mA, ÐIB = 5 mA ÐV
BEsat
Ð 0.95 V
Collector-Emitter Cutoff Current
at ÐV
EB
= 3 V, ÐV
CE
= 30 V ÐI
CEV
Ð50nA
Emitter-Base Cutoff Current
at ÐV
EB
= 3 V, ÐV
CE
= 30 V ÐI
EBV
Ð50nA
DC Current Gain
at ÐV
CE
= 1 V, ÐIC = 0.1 mA h
FE
60 Ð Ð
at ÐV
CE
= 1 V, ÐIC = 1 mA h
FE
80 Ð Ð
at ÐV
CE
= 1 V, ÐIC = 10 mA h
FE
100 300 Ð
at ÐV
CE
= 1 V, ÐIC = 50 mA h
FE
60 Ð Ð
at ÐV
CE
= 1 V, ÐIC = 100 mA h
FE
30 Ð Ð
Input Impedance
at ÐV
CE
= 10 V, ÐIC = 1 mA, f = 1 kHz h
ie
110kW
Gain-Bandwidth Product
at ÐV
CE
= 20 V, ÐIC = 10 mA, f = 100 MHz f
T
250 Ð MHz
Collector-Base Capacitance
at ÐV
CB
= 5 V, f = 100 kHz C
CBO
Ð 4.5 pF
Emitter-Base Capacitance
at ÐV
EB
= 0.5 V, f = 100 kHz C
EBO
Ð10pF
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