General Semiconductor MMBT3904 Datasheet
MMBT3904
Small Signal Transistors (NPN)
FEATURES
¨ NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
¨ As complementary type, the PNP
transistor MMBT3906 is recommended.
¨ This transistor is also available in the TO-92
case with the type designation 2N3904.
MECHANICAL DATA
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking code: 1AM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
60 V
Collector-Emitter Voltage V
CEO
40 V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current I
C
200 mA
Power Dissipation at T
A
= 25 ¡C P
tot
225
(1)
mW
300
(2)
Thermal Resistance Junction to Substrate Backside R
qSB
320
(1)
¡C/W
Thermal Resistance Junction to Ambient Air R
qJA
450
(1)
¡C/W
Junction Temperature T
j
150 ¡C
Storage Temperature Range T
S
Ð65 to +150 ¡C
NOTES:
(1) Device on fiberglass substrate, see layout.
(2) Device on alumina substrate.
.016 (0.4)
.056 (1.43
)
.037(0.95)
.037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
1
2
3
Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.118 (3.0)
.052 (1.33
)
.005 (0.125)
.094 (2.4)
.037 (0.95)
SOT-23
1/5/99
Dimensions in inches and (millimeters)
Pin configuration
1 = Base, 2 = Emitter, 3 = Collector.
NEW PRODUCT NEW PRODUCT NEW PRODUCT
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL MIN. MAX. UNIT
Collector-Base Breakdown Voltage
at IC= 10 mA, IE= 0 V
(BR)CBO
60 Ð V
Collector-Emitter Breakdown Voltage
at IC= 1 mA, IB= 0 V
(BR)CEO
40 Ð V
Emitter-Base Breakdown Voltage
at IE= 10 mA, IC= 0 V
(BR)EBO
6.0 Ð V
Collector Saturation Voltage
at I
C
= 10 mA, IB= 1 mA V
CEsat
Ð 0.2 V
at IC= 50 mA, IB= 5 mA V
CEsat
Ð 0.3 V
Base Saturation Voltage
at I
C
= 10 mA, IB= 1 mA V
BEsat
Ð 0.85 V
at IC= 50 mA, IB = 5 mA V
BEsat
Ð 0.95 V
Collector-Emitter Cutoff Current
VEB= 3 V, VCE= 30 V I
CEV
Ð50nA
Emitter-Base Cutoff Current
VEB= 3 V, VCE= 30 V I
EBV
Ð50nA
DC Current Gain
at V
CE
= 1 V, IC= 0.1 mA h
FE
40 Ð Ð
at V
CE
= 1 V, IC= 1 mA h
FE
70 Ð Ð
at V
CE
= 1 V, IC = 10 mA h
FE
100 300 Ð
at V
CE
= 1 V, IC = 50 mA h
FE
60 Ð Ð
at VCE= 1 V, IC = 100 mA h
FE
30 Ð Ð
Input Impedance
at VCE= 10 V, IC= 1 mA, f = 1 kHz h
ie
110kW
Gain-Bandwidth Product
at V
CE
= 20 V, IC = 10 mA, f = 100 MHz f
T
300 Ð MHz
Collector-Base Capacitance
at V
CB
= 5 V, f = 100 kHz C
CBO
Ð4pF
Emitter-Base Capacitance
at V
EB
= 0.5 V, f = 100 kHz C
EBO
Ð8pF
MMBT3904
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