General Semiconductor MMBT2907A Datasheet

2/28/00

Dimensions in inches and (millimeters)

.016 (0.4)

.056 (1.43

)

.037(0.95)

.037(0.95)

max. .004 (0.1)

.122 (3.1)

.016 (0.4) .016 (0.4)

1

2

3

Top View

.102 (2.6)

.007 (0.175)

.045 (1.15)

.110 (2.8)

.052 (1.33

)

.005 (0.125)

.094 (2.4)

.037 (0.95)

TO-236AB (SOT-23)

MMBT2907A

Small Signal Transistor (PNP)

Features

• PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.

• This transistor is also available in the TO-92 case
with the type designation MPS2907A.

Dimensions in inches and (millimeters)

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameters Symbols Value Units

Collector-Emitter Voltage -V

CEO

60 V

Collector-Base Voltage -V

CBO

60 V

Emitter-Base Voltage -V

EBO

5.0 V

Collector Current -I

C

600 mA

Power Dissipation

(1)

TA= 25°C

P

tot

225 mW

Derate above 25°C 1.8 mW/°C

Power Dissipation

(2)

TA= 25°C

P

tot

300 mW

Derate above 25°C 2.4 mW/°C

Thermal Resistance Junction to Ambient Air

FR-5 Board

R

ΘJA

556

°C/W

Alumina Substrate

417

Junction Temperature T

j

150 °C

Storage Temperature Range T

S

– 55 to +150 °C

Notes:

(1) FR-5 Board = 1.0 x 0.75 x 0.062 in.
(2) Alumina Substrate = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Mechanical Data

Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 2F
Packaging Codes/Options:

E8/10K per 13” reel (8mm tape)
E9/3K per 7” reel (8mm tape)

New Product

Pin Configuration

1 = Base 2 = Emitter
3 = Collector

Mounting Pad Layout

0.037 (0.95)

0.035 (0.9)

0.031 (0.8)

0.037 (0.95)

0.079 (2.0)

Electrical Characteristics(T

J

= 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

-V

CE =

10 V, -IC= 0.1 mA 75 ——

-V

CE =

10 V, -IC= 1 mA 100 ——

DC Current Gain h

FE

-V

CE =

10 V, -IC= 10 mA 100 ———

-V

CE =

10 V, -IC= 150 mA

(1)

100 — 300

-V

CE =

10 V, -IC= 500 mA

(1)

50 ——

Collector Cutoff Current -I

CEX

-VEB= 0.5 V, -VCE= 30 V ——50 nA

Collector Cutoff Current -I

CBO

-VCB= 50 V, IE= 0 ——0.01
µA

-VCB=50V,IE=0,TA=125°C ——10

Emitter-Base Cutoff Current -I

BL

-VEB= 0.5 V, -VCE= 30 V ——50 nA

Collector-Emitter Saturation Voltage

(1)

-V

CEsat

-

IC= 150 mA, -IB= 15 mA ——0.4

V

-IC

= 500 mA, -IB= 50 mA ——1.6

Base-Emitter Saturation Voltage

(1)

-V

BEsat

-

IC= 150 mA, -IB= 15 mA ——1.3

V

-IC

= 500 mA, -IB= 50 mA ——2.6

Collector-Emitter Breakdown Voltage

(1)

-V(

BR)CEO -IC

= 10 mA, IB= 0 60 ——V

Collector-Base Breakdown Voltage -V(

BR)CBO -IC

= 10 µA, IE= 0 60 ——V

Emitter-Base Breakdown Voltage -V(

BR)EBO -IE

= 10 µA, IC= 0 5.0 ——V

Current Gain-Bandwidth Product f

T

-

VCE= 20 V, -IC= 50 mA

200 ——MHz

f = 100 MHz

Output Capacitance C

obo

-

VCB= 10 V, f = 1.0 MHz

—— 8pF

IE= 0

Input Capacitance C

ibo

-

VEB= 2.0 V, f = 1.0 MHz

——30 pF

IC= 0

Notes:

(1) Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2.0%

MMBT2907A

Small Signal Transistor (PNP)