General Semiconductor MMBT2222A Datasheet

2/28/00

.016 (0.4)

.056 (1.43

)

.037(0.95)

.037(0.95)

max. .004 (0.1)

.122 (3.1)

.016 (0.4) .016 (0.4)

1

2

3

Top View

.102 (2.6)

.007 (0.175)

.045 (1.15)

.110 (2.8)

.052 (1.33

)

.005 (0.125)

.094 (2.4)

.037 (0.95)

TO-236AB (SOT-23)

MMBT2222A

Small Signal Transistor (NPN)

Features

• NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.

• This transistor is also available in the TO-92 case
with the type designation MPS2222A.

Dimensions in inches and (millimeters)

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameters Symbols Value Units

Collector-Base Voltage V

CBO

75 V

Collector-Emitter Voltage V

CEO

40 V

Emitter-Base Voltage V

EBO

6.0 V

Collector Current I

C

600 mA

Power Dissipation

on FR-5 Board

(1)

TA= 25°C

P

tot

225 mW

Derate above 25°C 1.8 mW/°C

Power Dissipation

on Alumina Substrate

(2)

TA= 25°C

P

tot

300 mW

Derate above 25°C 2.4 mW/°C

Thermal Resistance Junction FR-5 Board

R

ΘJA

556

°C/W

to Ambient Air Alumina Substrate 417
Junction Temperature T

j

150 °C

Storage Temperature Range T

S

– 55 to +150 °C

Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in.

(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Mechanical Data

Case: SOT-23 Plastic Package
Weight: approx. 0.008g
Marking Code: 1P
Packaging Codes/Options:

E8/10K per 13” reel (8mm tape)
E9/3K per 7” reel (8mm tape)

New Product

Pin Configuration

1 = Base 2 = Emitter
3 = Collector

0.079 (2.0)

0.037 (0.95)

0.035 (0.9)

0.031 (0.8)

0.037 (0.95)

Mounting Pad Layout

MMBT2222A

Small Signal Transistor (NPN)

Electrical Characteristics(T

J

= 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

V

CE =

10 V, IC= 0.1 mA 35 ——

V

CE =

10 V, IC= 1 mA 50 ——

V

CE =

10 V, IC= 10 mA 75 ——

DC Current Gain h

FE

V

CE =

10 V, IC= 10 mA

35 ———

T

A

= -55°C

V

CE =

10 V, IC= 150 mA

(1)

100 — 300

V

CE =

10 V, IC= 500 mA

(1)

40 ——

V

CE =

1.0 V, IC= 150 mA

(1)

50 ——

Collector-Base Breakdown Voltage V

(BR)CBO

IC = 10 µA, IE = 0 75 ——V

Collector-Emitter Breakdown Voltage

(1)

V

(BR)CEO

IC = 10 mA, IB = 0 40 ——V

Emitter-Base Breakdown Voltage V

(BR)EBO

IC = 10 µA, IC = 0 6.0 —— V

Collector-Emitter Saturation Voltage

(1)

V

CEsat

IC= 150 mA, IB= 15 mA ——0.3

V

IC= 500 mA, IB= 50 mA ——1.0

Base-Emitter Saturation Voltage

(1)

V

BEsat

IC= 150 mA, IB= 15 mA 0.6 — 1.2

V

IC= 500 mA, IB= 50 mA ——2.0

Collector Cut-off Current I

CEX

V

EB

= 3 V, V

CE

= 60 V ——10 nA

V

CB

= 60 V, IE= 0 ——10 nA

Collector Cut-off Current I

CBO

V

CB

= 50 V, IE = 0 V

——10 µA

TA= 125°C

Base Cut-off Current I

BL

VEB= 3 V, VCE= 60 V ——20 nA

Emitter Cut-off Current I

EBO

VEB= 3 VDC, IC= 0 ——100 nA

Current Gain-Bandwidth Product f

T

VCE= 20 V, IC= 20 mA

300 ——MHz

f = 100 MHz

Output Capacitance C

obo

VCB= 10 V, f= 1 MHz, IE= 0 —— 8pF

Input Capacitance C

ibo

VEB= 0.5 V, f = 1 MHz,IC= 0 ——25 pF

Noise Figure NF

V

CE

=10V, IC= 100 µA,

——4.0 dB

RS=1 kΩ, f = 1 kHz

V

CE

= 10 V, IC= 1 mA 2 — 8.0

Input Impedance h

ie

f = 1 kHz

kΩ

V

CE

= 10 V, IC= 10 mA 0.25 — 1.25

f = 1 kHz

V

CE

= 10 V, IC= 1 mA, 50 — 300

Small Signal Current Gain h

fe

f = 1 kHz

—

V

CE

= 10 V, IC= 10 mA, 75 — 375

f = 1 kHz

Voltage Feedback Ratio h

re

VCE= 10 V, IC= 1 mA, 50 — 300

—

f = 1 kHz 75 — 375

V

CE

= 10 V, IC= 1 mA, 5.0 — 35

Output Admittance h

oe

f = 1 kHz

µS

V

CE

= 10 V, IC= 10 mA, 25 — 200

f = 1 kHz

Note:

(1) Pulse Test: Pulse width ≤ 300 µs - Duty cycle ≤ 2%