General Semiconductor MBRB735, MBRB745, MBRB750, MBRB760 Datasheet
MBRB735 THRU MBRB760
-T-
SEATING
PLATE
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.027 (0.686)
0.037 (0.940)
1
2
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
0.090 (2.29)
0.110 (2.79)
0.245 (6.22)
MIN
- HEATSINK
PIN 1
K
K
0.095 (2.41)
0.100 (2.54)
K
PIN 2
0.047 (1.19)
0.055 (1.40)
SCHOTTKY RECTIFIER
Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes
TO-263AB
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS MBRB735 MBRB745 MBRB750 MBRB760 UNITS
Maximum repetitive peak reverse voltage V
Maximum working peak reverse voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current
Peak repetitive forward current (square wave, 20 KH
at T
=105°C
C
Peak forward surge current, 8.3ms single half sinewave superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current
Maximum instantaneous I
forward voltage at I
(NOTE 2)
Maximum instantaneous reverse current at
rated DC blocking voltage T
(NOTE 1)
Voltage rate of change (rated V
Maximum thermal resistance,
Operating junction temperature range T
Storage temperature range T
NOTES:
(1) 2.0µs, pulse width, f=1.0 KH
(2) Pulse test: 300µs pulse width, 1% duty cycle
(3) Thermal resistance from junction to case
) dv/dt 10,000 1,000 V/µs
R
(NOTE 3)
Z
(SEE FIG 1)
)
Z
(NOTE 1)
=7.5A, TC=25°C - 0.75
F
=7.5A, TC=125°C
F
IF=15A, TC=25°C 0.84 I
=15A, TC=125°C 0.72 -
F
=25°C I
C
TC=125°C 15.0 50.0
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
♦ Metal silicon junction
majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability, low forward
voltage drop
♦ High surge capability
♦ For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
♦ Guardring for over voltage protection
♦ High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body
Terminals: Lead solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounces, 2.24 grams
35 45 50 60 Volts
35 45 50 60 Volts
35 45 50 60 Volts
7.5 Amps
15.0 Amps
150.0 Amps
1.0 0.5 Amps
0.57 0.65
0.1 0.5 mA
3.0 °C/W
-65 to +150 °C
-65 to +175 °C
RWM
I
(AV)
I
FRM
I
FSM
I
RRM
V
R
RRM
DC
F
R
ΘJC
J
STG
Volts
4/98
1
10
100
25
50
75
100
125
150
175
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.01
0.1
1
10
50
0.1
1
10
100
40
100
1,000
4,000
0.01
0.1
1
10
100
0.1
1
10
100
0
50
100
150
0
2
4
6
8
10
0
20
40
60
80
100
0.001
0.01
0.1
1
10
50
RATINGS AND CHARACTERISTIC CURVES MBRB735 THRU MBRB760
FIG. 1 - FORWARD CURRENT DERATING CURVE
RESISTIVE OR INDUCTIVE LOAD
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
AMPERES
AVERAGE FORWARD CURRENT,
MBR735 - MBR745
MBR750 & MBR760
CASE TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
TJ=125°C
AMPERES
INSTANTANEOUS FORWARD CURRENT,
CHARACTERISTICS
PULSE WIDTH = 300µs
TJ=25°C
MBRB735 - MBRB745
MBRB750 & MBBR760
AMPERES
PEAK FORWARD SURGE CURRENT,
NUMBER OF CYCLES AT 60 H
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
MILLIAMPERES
INSTANTANEOUS REVERSE CURRENT,
MBRB735 - MBRB745
MBRB750 & MBBR760
TJ=125°C
TJ=75°C
Z
INSTANTANEOUS FORWARD VOLTAGE,
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
VOLTS
JUNCTION CAPACITANCE, pF
MBRB735 - MBRB745
MBRB750 & MBBR760
REVERSE VOLTAGE, VOLTS
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
TRANSIENT THERMAL IMPEDANCE, °C/W
TJ=25°C
PERCENT OF RATED PEAK REVERSE
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
VOLTAGE, %
t, PULSE DURATION, sec.
Loading...