General Semiconductor MBRB1045, MBRB1050, MBRB1060, MBRB1035 Datasheet

MBRB1035 THRU MBRB1060
-T-
SEATING
PLATE
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.027 (0.686)
0.037 (0.940)
1
2
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.018 (0.46)
0.025 (0.64)
0.080 (2.03)
0.110 (2.79)
0.090 (2.29)
0.110 (2.79)
0.245 (6.22) MIN
- HEATSINK
PIN 1
K
K
0.095 (2.41)
0.100 (2.54)
K
PIN 2
0.047 (1.19)
0.055 (1.40)
SCHOTTKY RECTIFIER
Reverse Voltage-35 to 60 Volts Forward Current- 10.0 Amperes
TO-263AB
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Maximum repetitive peak reverse voltage V Maximum working peak reverse voltage V Maximum DC blocking voltage V Maximum average forward rectified current
(SEE FIG. 1)
Peak repetitive forward current at T (square wave 20 KH
Z)
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current Voltage rate of change (rated V Maximum instantaneous I
forward voltage at
Maximum instantaneous reverse current at rated
(NOTE 2)IF
DC blocking voltage T
Maximum thermal resistance, junction to case R Operating junction temperature range T Storage temperature range T
NOTES:
(1) 2.0µs pulse width, f=1.0 KH (2) Pulse test: 300µs pulse width, 1% duty cycle
Z
=135°C
C
(NOTE 1)
) dv/dt 10,000 V/µs
R
=10A, TC=25°C - 0.80
F
=10A, TC=125°C 0.57 0.70 =20A, TC=25°C
I
F
I
=20A, TC=125°C 0.72 0.85
F
(NOTE 2) TC
= 25°C I
C
=125°C 15.0
FEATURES
Flammability Classifications 94V-0
Metal silicon junction, majority carrier conductionLow power loss, high efficiencyHigh current capability,
low forward voltage drop
High surge capabilityFor use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protectionHigh temperature soldering in accordance with
CECC 802 / Reflow guaranteed
MECHANICAL DATA
Case: JEDEC TO-263AB molded plastic body Terminals: Leads solderable per MIL-STD-750,
Method 2026
Polarity: As marked Mounting Position: Any Weight: 0.08 ounces, 2.24 grams
SYMBOLS MBRB1035 MBRB1045 MBRB1050 MBRB1060 UNITS
RRM
RWM
I
(AV)
I
FRM
I
FSM
I
RRM
V
ΘJC
STG
DC
F
R
J
35 45 50 60 Volts 35 45 50 60 Volts 35 45 50 60 Volts
10.0 Amps
20.0 Amps
150.0 Amps
1.0 0.5 Amps
0.84 0.95
Volts
0.10 mA
2.0 °C/W
-65 to +150 °C
-65 to +175 °C
4/98
0
50
100
150
2
4
6
8
10
12
0.1
1
10
100
25
50
75
125
150
175
0.01
0.1
1
10
100
0.1
10.0
0.1
1
10
100
100
1,000
4,000
100
100
1
0
0
20
40
60
80
100
0.001
0.01
0.1
1
10
20
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.01
0.1
1
10
50
RATINGS AND CHARACTERISTIC CURVES MBRB1035 THRU MBRB1060
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
FIG. 1 - FORWARD CURRENT DERATING CURVE
AMPERES
AVERAGE FORWARD CURRENT,
AMPERES
RESISTIVE OR INDUCTIVE LOAD
MBRB1035 - MBRB1045
MBRB1050 & MBRB1060
CASE TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
TJ=125°C
TJ=25°C
PULSE WIDTH=300µs 1% DUTY CYCLE
AMPERES
PEAK FORWARD SURGE CURRENT,
MILLIAMPERES
INSTANTANEOUS REVERSE CURRENT,
NUMBER OF CYCLES AT 60 H
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
MBRB1035 - MBRB1045
MBRB1050 & MBRB1060
TJ=125°C
TJ=75°C
Z
INSTANTANEOUS FORWARD CURRENT,
JUNCTION CAPACITANCE, pF
MBRB1035 - MBRB1045
MBRB1050 & MBRB1060
INSTANTANEOUS FORWARD VOLTAGE,
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
MBRB1035 - MBRB1045
MBRB1050 & MBRB1060
REVERSE VOLTAGE, VOLTS
VOLTS
TJ=25°C f=1.0 MHz Vsig=50mVp-p
TRANSIENT THERMAL IMPEDANCE, °C/W
TJ=25°C
PERCENT OF RATED PEAK REVERSE
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
VOLTAGE, %
t
PULSE DURATION, sec.
,
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