General Semiconductor MBR745, MBR735, MBR760, MBR750 Datasheet

MBR735 THRU MBR760

0.154 (3.91)

0.148 (3.74)

DIA.

0.113 (2.87)

0.103 (2.62)

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.145 (3.68)

0.135 (3.43)

0.350 (8.89)

0.330 (8.38)

0.160 (4.06)

0.140 (3.56)

0.037 (0.94)

0.027 (0.68)

0.205 (5.20)

0.195 (4.95)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.36)

0.110 (2.79)

0.100 (2.54)

1.148 (29.16)

1.118 (28.40)

0.105 (2.67)

0.095 (2.41)

0.410 (10.41)

0.390 (9.91)

0.635 (16.13)

0.625 (15.87)

0.560 (14.22)

0.530 (13.46)

PIN 1

PIN 2

CASE

0.415 (10.54) MAX.

0.370 (9.40)

0.360 (9.14)

SCHOTTKY RECTIFIER

Reverse Voltage - 35 to 60 Volts Forward Current - 7.5 Amperes

TO-220AC

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Maximum repetitive peak reverse voltage V Maximum working peak reverse voltage V Maximum DC blocking voltage V Maximum average forward rectified current Peak repetitive forward current (square wave, 20 KH

at T

=105°C

Peak forward surge current, 8.3ms single half sinewave superimposed on rated load (JEDEC Method)

Peak repetitive reverse surge current Maximum instantaneous I

forward voltage at I

(NOTE 2)

Maximum instantaneous reverse current at rated DC blocking voltage T

(NOTE 1)

Voltage rate of change (rated V Maximum thermal resistance,

Operating junction temperature range T Storage temperature range T

NOTES:

(1) 2.0µs, pulse width, f=1.0 KH (2) Pulse test: 300µs pulse width, 1% duty cycle (3) Thermal resistance from junction to case and/or thermal resistance from junction to ambient

4/98

) dv/dt 10,000 V/µs

(NOTE 3)

(SEE FIG 1)

)

(NOTE 1)

=7.5A, TC=25°C - 0.75

=7.5A, TC=125°C

IF=15A, TC=25°C 0.84 I

=15A, TC=125°C 0.72 -

=25°C I

TC=125°C 15.0 50

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classifications 94V-0

♦ Metal to silicon rectifier,

majority carrier conduction

♦ Low power loss, high efficiency ♦ High current capability, low forward

voltage drop

♦ High surge capability ♦ For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

♦ Guardring for over voltage protection ♦ High temperature soldering guaranteed:

250°C/10 seconds, 0.25" (6.35mm) from case

MECHANICAL DATA

Case: JEDEC TO-220AC molded plastic body Terminals: Lead solderable per MIL-STD-750,

Method 2026

Polarity: As marked Mounting Position: Any Mounting T orque: 5 in. - lbs. max. Weight: 0.08 ounces, 2.24 grams

SYMBOLS MBR735 MBR745 MBR750 MBR760 UNITS

35 45 50 60 Volts 35 45 50 60 Volts 35 45 50 60 Volts

7.5 Amps

15.0 Amps

150.0 Amps

1.0 0.5 Amps

0.57 0.65

Volts

0.1 0.5 mA

3.0

60.0

°C/W

-65 to +150 °C

-65 to +175 °C

RWM

(AV)

FRM

FSM

RRM

R R

RRM

ΘJC ΘJA

STG

100

125

150

175

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

0.01

0.1

100

1,000

4,000

0.01

0.1

100

0.1

100

150

100

0.001

0.01

0.1

RATINGS AND CHARACTERISTIC CURVES MBR735 THRU MBR760

FIG. 1 - FORWARD CURRENT DERATING CURVE

AMPERES

AVERAGE FORWARD CURRENT,

MBR750 & MBR760

FIG. 3 - TYPICAL INSTANTANEOUS FORWARD

MBR735 - MBR745

CASE TEMPERATURE, °C

CHARACTERISTICS

TJ=125°C

RESISTIVE OR INDUCTIVE LOAD

PULSE WIDTH = 300µs

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE CHARACTERISTICS

SURGE CURRENT

TJ=TJ max.

8.3ms SINGLE HALF SINE-WAVE (JEDEC Method)

MBR735 - MBR745

MBR750 & MBR760

TJ=125°C

AMPERES

TJ=25°C

INSTANTANEOUS FORWARD CURRENT,

INSTANTANEOUS FORWARD VOLTAGE,

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

VOLTS

MBR735 - MBR745

MBR750 & MBR760

TJ=25°C f=1.0 MHz Vsig=50mVp-p

MILLIAMPERES

INSTANTANEOUS REVERSE CURRENT,

PERCENT OF RATED PEAK REVERSE

FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

TJ=75°C

VOLTAGE, %

TJ=25°C

JUNCTION CAPACITANCE, pF

MBR735 - MBR745

MBR750 & MBR760

REVERSE VOLTAGE, VOLTS

TRANSIENT THERMAL IMPEDANCE, °C/W

t, PULSE DURATION, sec.