General Semiconductor LL5711, LL6263 Datasheet
10/6/00
Features
• For general purpose applications
• Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching
and low logic level applications.
• This diode is also available in the DO-35 case
with type designation 1N5711 and 1N6263.
Mechanical Data
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
Cathode Band Color: Green
Packaging Codes/Options:
D1/10K per 13” reel (8mm tape), 20K/box
D2/2.5K per 7” reel (8mm tape), 20K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Peak Inverse Voltage
LL5711
V
RRM
70
V
LL6263 60
Power Dissipation (Infinite Heatsink) P
tot
400
(1)
mW
Maximum Single Cycle Surge 10µs Square Wave I
FSM
2.0 A
Junction Temperature T
j
125 °C
Storage Temperature Range T
S
–55 to +150 °C
Electrical Characteristics(T
J
= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Reverse Breakdown Voltage
LL5711
V
(BR)R
I
R =
10µA
70 — —
V
LL6263 60 — —
Leakage Current I
R
VR= 50V — — 200 nA
Forward Voltage Drop V
F
IF= 1.0mA — — 0.41
V
IF= 15mA — — 1.0
Junction Capacitance C
tot
VR= 0V, f = 1MHz — — 2.2 pF
Reverse Recovery Time t
rr
IF= IR= 5mA,
—— 1ns
recover to 0.1I
R
Note: (1) Valid provided that electrodes are kept at ambient temperature.
.146 (3.7)
.019 (0.48)
Cathode Band
.130 (3.3)
.051 (1.3)
.011 (0.28)
.063 (1.6)
Dia.
MiniMELF (SOD-80C)
Dimensions in inches and (millimeters)
LL5711 and LL6263
Schottky Diodes
Ratings and
Characteristic Curves(T
A
= 25°C unless otherwise noted)
LL5711 and LL6263
Schottky Diodes
Loading...