General Semiconductor LL48 Datasheet
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LL48
Schottky Diodes
Ratings at
Mini-MELF
Cathode Mark
.019 (0.48)
.142 (3.6)
.134 (3.4)
Dimensions in inches and (millimeters)
.011 (0.28)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
For general purpose applications.
♦
These diodes feature low turn-on volt-
♦
age and high break-down voltage.
These devices are protected by a PN
junction guard ring against excessive volt-
.055 (1.4)
∅
.063 (1.6)
age, such as electrostatic discharges.
This diode is also available in the DO-35 case
♦
with type designation BAT48.
MECHANICAL DATA
Mini-MELF Glass Case (SOD-80)
Case:
Weight:
approx. 0.05 g
Symbol Value Unit
Repetitive Peak Reverse Voltage V
Forward Continuous Current at T
= 25 °C I
amb
Repetitive Peak Forward Current
< 1 s, δ < 0.5, T
at t
p
amb
= 25 °C
Surge Forward Current
at tp < 10 ms, T
Power Dissipation at T
amb
= 25 °C
= 80 °C P
amb
Junction Temperature T
Ambient Operating Temperature Range T
Storage Temperature Range T
1)
Valid provided that electrodes are kept at ambient temperature.
F
I
FRM
I
FSM
amb
RRM
tot
j
S
40 V
1)
350
1)
1
7.5
330
1)
1)
mA
A
A
mW
125 °C
–55 to +125 °C
–65 to +150 °C
5/98
236
LL48
Ratings at
Reverse Breakdown Voltage
tested with 100
Forward Voltage
Pulse Test tp < 300 µs, δ < 2%
at IF = 0.1 mA
at I
at IF = 250 mA
Leakage Current
Pulse Test t
at VR = 10 V
at VR = 10 V, Tj = 60 °C
at V
at VR = 20 V, Tj = 60 °C
at V
at VR = 40 V, Tj = 60 °C
Capacitance
at V
Thermal Resistance Junction to Ambient Air R
1)
Valid provided that electrodes are kept at ambient temperature.
ambient temperature unless otherwise specified
25 °C
µ
A Pulses
= 10 mA
F
< 300 µs, δ < 2%
p
= 20 V
R
= 40 V
R
= 1 V, f = 1 MHz C
R
Symbol Min. Typ. Max. Unit
V
(BR)R
V
F
V
F
V
F
I
R
I
R
I
R
I
R
I
R
I
R
tot
thJA
ELECTRICAL CHARACTERISTICS
40––V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
0.40
0.90
2
15
5
25
25
50
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
µ
A
–12–pF
––0.31)K/mW
237
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