General Semiconductor LL4448 Datasheet
LL4448
Small Signal Diodes
Ratings at
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
Dimensions in inches and (millimeters)
.019 (0.48)
.011 (0.28)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
Silicon Epitaxial Planar Diode
♦
Fast switching diode in MiniMELF case
♦
especially suited for automati c insertion.
This diode is also available in other case
♦
.055 (1.4)
∅
.063 (1.6)
styles including: the DO-35 case with the type
designation 1N4448, the SOD-123 case with the
type designation 1N4448W, and the SOT-23
case with the type designation IMBD4448.
MECHANICAL DATA
MiniMELF Glass Case (SOD-80)
Case:
Weight:
approx. 0.05 g
Reverse Voltage V
Peak Reverse Voltage V
Rectified Current (Average)
Half W ave Rectification with Resist. Load
at T
Surge For ward Current at t < 1 s and T
Power Dissipation at T
= 25 °C and f
amb
≥ 50 Hz
= 25 °C I
j
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Val id provided that electrodes are kept at ambient temperature.
Symbol Value Unit
75 V
100 V
1)
150
mA
500 mA
1)
500
mW
175 °C
–65 to +175 °C
I
0
FSM
R
RM
tot
j
S
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
Forw ard Voltage
at I
= 5 mA
F
= 100 mA
at I
F
Leakage Current
= 20 V
at V
R
= 75 V
at V
R
at V
= 20 V, Tj = 150 °C
R
LL4448
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
V
F
V
F
I
R
I
R
I
R
0.62
–
–
–
–
–
–
–
–
–
0.72
1
25
5
50
V
V
nA
µ
µ
A
A
Capacitance
= VR = 0
at V
F
Rev erse Recovery Time
= 10 mA to IR = 1 mA, VR = 6 V, R
from I
F
Thermal Resistance
= 100
L
C
tot
t
rr
Ω
R
thJA
Junct ion to A mbien t Air
Rectification Efficiency
at f = 100 MHz, V
1)
Valid provided that electrodes are kept at ambient temperature.
RF
= 2 V
η
v
Rectification Efficiency Measurement Circuit
––4pF
––4ns
––0.351)K/mW
0.45 – – –
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