General Semiconductor LL43, LL42 Datasheet
LL42, LL43
Schottky Diodes
Ratings at
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
Dimensions in inches and (millimeters)
.019 (0.48)
.011 (0.28)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
For general purpose applications.
♦
These diodes feature very low turn-
♦
on voltage and fast switching. These
devices are protected by a PN junction
guard ring against excessive voltage, such
.055 (1.4)
∅
.063 (1.6)
as electrostatic discharges.
♦
These diodes are also available in the DO-35 case
with type designations BAT42 to BAT43 and in the
SOD-123 case with type designations
BAT42W to BAT43W.
MECHANICAL DATA
Case:
MiniMELF Glass Case (SOD-80)
Weight:
approx. 0.05 g
Repetitive Peak Rev erse Voltage V
Forward Continuous Current at T
= 25 °C I
amb
Repetitive Peak Forward Current
at t
< 1 s, δ < 0.5, T
p
amb
= 25 °C
Surge Forw ard Current
< 10 ms, T
at t
p
Power Dissipation at T
amb
= 25 °C
amb
= 65 °C P
Junction Temperature T
Ambient Operating Temperature Range T
Storage Temperature Range T
1)
Valid provided that electrodes are kept at ambient temperature.
Symbol Value Unit
30 V
1)
200
500
1)
4
200
1)
1)
mA
mA
A
mW
125 °C
–55 to +125 °C
–65 to +150 °C
F
I
FRM
I
FSM
j
amb
S
RRM
tot
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
LL42, LL43
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Rev erse Breakdown Voltage
V
(BR)R
tested with 100 µA Pulses
Forw ard Voltage
Pulse Test t
at I
= 200 mA
F
= 10 mA
at I
F
at I
= 50 mA
F
at I
= 2 mA
F
at I
= 15mA
F
< 300 µs, δ < 2%
p
LL42
LL42
LL43
LL43
V
F
V
F
V
F
V
F
V
F
Leakage Current
Pulse Test t
= 25 V
at V
R
= 25 V, Tj = 100 °C
at V
R
Capacitance
= 1 V, f = 1 MHz
at V
R
Rev erse Recov ery Time
from I
F
= 100
R
L
Rectification Efficiency
= 15 KΩ, CL = 300 pF,
at R
L
f = 45 MHz, V
Thermal Resistance Junction to Ambient Air R
1)
Valid provided that electrodes are kept at ambient temperature.
< 300 µs, δ < 2%
p
= 10 mA through IR = 10 mA to IR = 1 mA,
Ω
= 2 V
RF
I
I
C
t
η
R
R
tot
rr
v
thJA
30––V
–
–
–
0.26
–
–
–
–
–
–
–
–
–
–
1
0.4
0.65
0.33
0.45
0.5
100
V
V
V
V
V
µ
A
µ
A
–7–pF
––5ns
80––%
––0.31)K/mW
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