General Semiconductor LL4151 Datasheet
LL4151
Small Signal Diodes
Ratings at
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
Dimensions in inches and (millimeters)
.019 (0.48)
.011 (0.28)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
Silicon Epitaxial Planar Diode
♦
Fast switching diode in MiniMELF
♦
case especially suited for automatic
insertion .
♦
.055 (1.4)
∅
.063 (1.6)
This diode is also available in other case styles
including the DO-35 case with the type
designation 1N4151 and the SOD-123 case
with the type designation 1N4151W.
MECHANICAL DATA
MiniMELF Glass Case (SOD-80)
Case:
Weight:
approx. 0.05 g
Reverse Voltage V
Peak Reverse Voltage V
Forward DC current at T
= 25 °C I
amb
Rectified Current (Average)
Half W ave Rectification with Resist. Load
at T
Surge For ward Current at t < 1 s and T
Power Dissipation at T
= 25 °C and f
amb
≥ 50 Hz
= 25 °C I
j
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Val id provided that electrodes are kept at ambient temperature.
Symbol Value Unit
50 V
75 V
1)
200
150
1)
mA
mA
500 mA
1)
500
mW
175 °C
–65 to +175 °C
F
I
0
FSM
R
RM
tot
j
S
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
LL4151
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Forward Volt age
at I
= mA
F
V
F
Leakage Current
= 50 V
at V
R
at V
= 50 V, Tj = 150 °C
R
Capacitance
= VR = 0
at V
F
I
R
I
R
C
tot
Reverse Recovery Time
= 10 mA through IR = 10 mA to IR = 1 mA
from I
F
= 10 mA to IR = 1 mA, VR = 6 V, R
from I
F
Thermal Resistance
= 100
L
t
rr
t
Ω
R
rr
thJA
Junction to Ambient Air
Rectification Efficiency
at f = 100 MHz, V
1)
Valid provided that electrodes are kept at ambient temperat ure.
RF
= 2 V
η
v
––1
–
–
–
–
50
50
V
nA
µ
A
––2pF
–
–
–
–
4
2
ns
ns
––0.351)K/mW
0.45–––
Rectification Efficiency Measurement Circuit
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