General Semiconductor LL4148 Datasheet
LL4148
Small Signal Diodes
Ratings at
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
Dimensions in inches and (millimeters)
.019 (0.48)
.011 (0.28)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
Silicon Epitaxial Planar Diodes
♦
Fast switching diode in MiniMELF case
♦
especially suited for automatic insertion.
This diode is also available in other case styles
♦
.055 (1.4)
∅
.063 (1.6)
including: the DO-35 case with the type designa tion
1N4148, the SOD-123 case with the type
designation 1N4148W, and the SOT-23
case with the type designation IMBD4148.
MECHANICAL DATA
MiniMELF Glass Case (SOD-80)
Case:
Weight:
approx. 0.05 g
Reverse Voltage V
Peak Reverse Voltage V
Forward DC current at T
= 25 °C I
amb
Rectified Current (Average)
Half W ave Rectification with Resist. Load
at T
Surge For ward Current at t < 1 s and T
Power Dissipation at T
= 25 °C and f
amb
≥ 50 Hz
= 25 °C I
j
= 25 °C P
amb
Junction Temperature T
Storage Temperature Range T
1)
Val id provided that electrodes are kept at ambient temperature.
Symbol Value Unit
75 V
100 V
1)
200
150
1)
mA
mA
500 mA
1)
500
mW
175 °C
–65 to +175 °C
F
I
0
FSM
R
RM
tot
j
S
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
LL4148
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
Forw ard Voltage
at I
= 10 mA
F
V
F
Leakage Current
= 20 V
at V
R
= 75 V
at V
R
= 20 V, Tj = 150 °C
at V
R
Capacitance
= VR = 0
at V
F
Voltage Rise when Switching ON
I
R
I
R
I
R
C
tot
V
fr
tested with 50 mA Forward Puls es
=0.1 µs, Rise Time < 30 ns, fp= 5 to 100 kHz
t
p
Rev erse Recovery Time
IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100
from
Thermal Resistance
t
rr
Ω
R
thJA
Junct ion to A mbien t Air
Rectification Efficiency
at f = 100 MHz, V
1)
Valid provided that electrodes are kept at ambient temperature.
RF
= 2 V
η
v
––1
–
–
–
–
–
–
25
5
50
V
nA
µ
µ
A
A
––4pF
––2.5V
––4ns
––0.351)K/mW
0.45 – – –
Rectification Efficiency Measurement Circuit
Loading...