General Semiconductor LL41 Datasheet
LL41
Schottky Diodes
Ratings at
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
Dimensions in inches and (millimeters)
.019 (0.48)
.011 (0.28)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
For gener al purpose applications .
♦
This diode features low turn-on
♦
voltage and high breakd own vol tage. These dev ices are protected b y
a PN junction guard ring against
.055 (1.4)
∅
.063 (1.6)
excessive voltage, such as electrostatic discharges.
♦
This diode is also available in the DO-35
case with type designation BAT41.
MECHANICAL DATA
Case:
MiniMELF Glass Case (SOD-80)
Weight:
approx. 0.05 g
Repetitive Peak Rev erse Volt age V
Forward Continuous Current at T
= 25 °C I
amb
Repetitive Peak Forward Current
< 1 s, @ < 0.5, T
at t
p
amb
= 25 °C
Surge For ward Current
= 10 ms, T
at t
p
Power Dissipation, T
amb
= 25 °C
= 25 °C P
amb
Junction Temperature T
Ambient Operating Temperature Range T
Storage Temperature Range T
1)
Val id provided that electrodes are kept at ambient temperature.
Symbol Value Unit
RRM
F
I
FRM
I
SFM
tot
j
amb
S
100 V
1)
100
350
750
400
1)
1)
1)
mA
mA
mA
mW
125 °C
–65 to +125 °C
–65 to +150 °C
4/98
LL41
ELECTRICAL CHARACTERISTICS
Ratings at
Test Conditions Symbol Min. Typ. Max. Unit
ambient temperature unless otherwise specified
25 °C
Reverse Breakdown Voltage
V
(BR)R
tested with 100 µA / 300 µs Pulses
Forw ard Voltage
Pulse Test t
= 1 mA
at I
F
= 200 mA
at I
F
= 300 µs
p
V
F
V
F
Leakage Current
Pulse Test t
= 50 V, at Tj = 25 °C
at V
R
= 50 V, at Tj = 100 °C
at V
R
Capacitance
= 1 V, f = 1 MHz
at V
R
Reverse Recovery Time
from I
F
= 100 Ohm
R
L
Thermal Resistance Junction to Ambient Air R
1)
Valid provided that electrodes are kept at ambient temperat ure.
= 300 µs
p
= 10 mA, to IR = 10 mA to IR = 1 mA
I
I
C
t
R
R
tot
rr
thJA
100 110 – V
–
–
–
–
0.40
–
–
–
0.45
1.0
100
20
V
V
nA
µ
A
–2–pF
–5–ns
– – 300
1)
K/W
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