FEATURES
Voltage Stabilizers
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
25 °C
ambient temperature unless otherwise specified
Case:
MiniMELF Glass Case (SOD-80)
Weight:
approx. 0.05 g
Dimensions in inches and (millimeters)
MiniMELF
.142 (3.6)
.019 (0.48)
∅
Cathode Mark
.063 (1.6)
.134 (3.4)
.055 (1.4)
.011 (0.28)
4/98
Symbol Value Unit
Operating Curren t see Table “Characteristics”
Inverse Current I
F
100 mA
Power Dissipation at T
amb
= 25 °C P
tot
300
1)
mW
Junction Temperature T
j
150 °C
Storage Temperature Range T
S
–55 to +150 °C
1)
Valid provided that electrodes are kept at ambient temperat ure.
LL1.5 THRU LL2.4
Silicon Planar Stabi lizer Diodes
Monolithic integrated analog circuits in Min-
iMELF case, designed for small power stabilizer and limitation circuits, providing low dynamic
resistance and high-quality
stabilization performance as well as low noise. In the
rev ers e dir ect i on, these devices show the behavior
of forward-biased silicon diodes.
The end of the device marked with the cathode ring
is to be connected:
LL1.5 and LL2 to the negative pole of the supply voltage
LL2.4 to the positive pole of the supply voltage
These diodes are also available in DO-35 case
with the type designation ZTE1.5 … ZTE2.4.
♦
♦
♦
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ELECTRICAL CHARACTERISTICS
Ratings at
25 °C
ambient temperature unless otherwise specified
LL1.5 THRU LL2.4
Symbol Min. Typ. Max. Unit
Forward Volt age at I
F
= 10 mA V
F
––1.1V
Te mperature Coefficient of the stabilized voltage
at I
Z
= 5 mA
LL1.5, LL2
LL2.4
α
VZ
α
VZ
–
–
–26
–34
–
–
10–4/K
10
–4
/K
Thermal Resistance Junction to Ambient Air R
thJA
––0.41)K/mW
1)
Valid provided that electrodes are kept at ambient temperat ure.
Type Operating
voltage
at I
Z
= 5 mA
1)
VZ V
Dynamic
resistance
at I
Z
= 5 mA
r
zj
Ω
Permissible
operating current
at T
amb
= 25 °C
2)
IZ max. mA
LL1.5
1.35 … 1.55 13 (< 20) 120
LL2
2.0 … 2.3 18 (< 30) 120
LL2.4
2.2 … 2.56 14 (< 20) 120
1)
Tested with pulses tp = 5 ms
2)
Valid provided that electrodes are kept at ambient temperat ure.