General Semiconductor LL103C, LL103B, LL103A Datasheet
LL103A THRU LL103C
Schottky Diodes
Ratings at
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
Dimensions in inches and (millimeters)
.019 (0.48)
.011 (0.28)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
For general purpose applications.
♦
The LL103A, B, C is a metal-on-silicon
♦
Schottky barrier device which is protected by a PN junction guard ring.
♦
The low forward voltag e drop and fast s witching make it ideal for protection of MOS devices,
.055 (1.4)
∅
.063 (1.6)
steering, biasing and coupling diodes
for fast switching and low logic level applications.
Other applications are click sup press i on, efficient
full wave bridges in telephone subsets, and blocking
diodes in rechargeable low voltage battery systems.
♦
This diode is also available in DO-35 case with
the type designation SD103A, B, C, and in the
SOD-123 case with type designation
SD103A W, SD103BW, SD103CW.
MECHANICAL DATA
Case:
MiniMELF Glass Case SOD-80C
Weight:
approx. 0.05 g
Peak Inverse Voltage
LL103A
LL103B
LL103C
Power Dissipation (Infinite Heatsink)
8
″
= 3/
T
C
from Body
derates at 4 mW/°C to 0 at 125 °C
Junction Temperature T
Storage Temperature Range T
Single Cycle Surge
60-Hz Sine Wave
1)
Val id provided that electrodes are kept at ambient temperature.
Symbol Value Unit
V
V
V
P
I
FSM
RRM
RRM
RRM
tot
j
S
40
30
20
1)
400
125 °C
–55 to +150 °C
15 A
V
V
V
mW
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
Leakage Current
at V
= 30 V
R
at V
= 20 V
R
at V
= 10 V
R
Forward Volt age Drop
= 20 mA
at I
F
at I
= 200 mA
F
LL103A THRU LL103C
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
LL103A
LL103B
LL103C
I
R
I
R
I
R
V
F
V
F
–
–
–
–
–
–
–
–
–
–
5
5
5
0.37
0.6
µ
A
µ
A
µ
A
V
V
Junction Capacitance
at V
= 0 V, f = 1 MHz
R
Reverse Recovery Time
= IR = 50 mA to 200 mA, recover to 0.1 I
at I
F
RATINGS AND CHARACTERISTIC CURVES LL103A THRU LL103C
C
tot
t
rr
R
–50–pF
–10–ns
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