General Semiconductor LL101B, LL101A, LL101C Datasheet

LL101A THRU LL101C
Schottky Diodes
Ratings at
MiniMELF
Cathode Mark
.142 (3.6) .134 (3.4)
Dimensions in inches and (millimeters)
.019 (0.48) .011 (0.28)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
For general purpose applications . The LL101 series is a metal-on-silicon
Schottky barrier device which is protected by a PN junction guar d ring. T he low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing
.055 (1.4)
.063 (1.6)
and coupling diodes for fast switching and low logic level applications.
This diode is also available in the DO-35 case with type designation SD101A, B, C, and in the SOD-123 case with type designation SD101 AW, SD101BW, SD101CW.
MECHANICAL DATA
MiniMELF Glass Case (SOD-80)
Weight:
approx. 0.05 g
Peak Inverse Voltage
LL101A LL101B LL101C
Power Dissipation (Infinite Heatsink) P Max. Single Cycle Surge
10 µs Square Wave Junction Temperature T Storage Temperature Range T
1)
Val id provided that electrodes are kept at ambient temperature.
Symbol Value Unit V
V V
I
FSM
RRM RRM RRM
tot
j
S
60 50 40
400
1)
V V V
mW
2A
125 °C –55 to +150 °C
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
Reverse Breakdown Voltage
= 10 µA
at I
R
Leakage Current at V
= 50 V
R
= 40 V
at V
R
at V
= 30 V
R
Forw ard Voltage Drop
= 1 mA
at I
F
at I
= 15 mA
F
Junction Capacitance
= 0 V, f = 1 MHz
at V
R
Reverse Recovery Time
= IR = 5 mA, recover to 0.1 I
at I
F
LL101A THRU LL101C
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
LL101A LL101B LL101C
LL101A LL101B LL101C
LL101A LL101B LL101C LL101A LL101B LL101C
LL101A LL101B LL101C
R
V
(BR)R
V
(BR)R
V
(BR)R
I
R
I
R
I
R
V
F
V
F
V
F
V
F
V
F
V
F
C
tot
C
tot
C
tot
t
rr
60 50 40
– – –
– – – – – –
– – –
– – –
– – –
– – – – – –
– – –
––1ns
– – –
200 200 200
0.41
0.4
0.39 1
0.95
0.9
2.0
2.1
2.2
V V V
nA nA nA
V V V V V V
pF pF pF
RATINGS AND CHARACTERISTIC CURVES LL101A THRU LL101C
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