LL101A THRU LL101C
Schottky Diodes
Ratings at
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
Dimensions in inches and (millimeters)
.019 (0.48)
.011 (0.28)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
ambient temperature unless otherwise specified
25 °C
FEATURES
♦
For general purpose applications .
The LL101 series is a metal-on-silicon
♦
Schottky barrier device which is protected
by a PN junction guar d ring. T he low forward
voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing
.055 (1.4)
∅
.063 (1.6)
and coupling diodes for fast switching and low logic
level applications.
♦
This diode is also available in the DO-35 case with type
designation SD101A, B, C, and in the SOD-123 case
with type designation SD101 AW, SD101BW, SD101CW.
MECHANICAL DATA
Case:
MiniMELF Glass Case (SOD-80)
Weight:
approx. 0.05 g
Peak Inverse Voltage
LL101A
LL101B
LL101C
Power Dissipation (Infinite Heatsink) P
Max. Single Cycle Surge
10 µs Square Wave
Junction Temperature T
Storage Temperature Range T
1)
Val id provided that electrodes are kept at ambient temperature.
Symbol Value Unit
V
V
V
I
FSM
RRM
RRM
RRM
tot
j
S
60
50
40
400
1)
V
V
V
mW
2A
125 °C
–55 to +150 °C
4/98
Ratings at
ambient temperature unless otherwise specified
25 °C
Reverse Breakdown Voltage
= 10 µA
at I
R
Leakage Current
at V
= 50 V
R
= 40 V
at V
R
at V
= 30 V
R
Forw ard Voltage Drop
= 1 mA
at I
F
at I
= 15 mA
F
Junction Capacitance
= 0 V, f = 1 MHz
at V
R
Reverse Recovery Time
= IR = 5 mA, recover to 0.1 I
at I
F
LL101A THRU LL101C
ELECTRICAL CHARACTERISTICS
Symbol Min. Typ. Max. Unit
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
R
V
(BR)R
V
(BR)R
V
(BR)R
I
R
I
R
I
R
V
F
V
F
V
F
V
F
V
F
V
F
C
tot
C
tot
C
tot
t
rr
60
50
40
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
––1ns
–
–
–
200
200
200
0.41
0.4
0.39
1
0.95
0.9
2.0
2.1
2.2
V
V
V
nA
nA
nA
V
V
V
V
V
V
pF
pF
pF
RATINGS AND CHARACTERISTIC CURVES LL101A THRU LL101C