General Semiconductor GSD2004S Datasheet
SYMBOL VALUE UNIT
Reverse Voltage V
R
100 Volts
Forward Current (continuous) I
F
200 mA
Non-Repetitive Peak Forward Current
at t = 1s
I
FSM
500 mA
Power Dissipation on FR-5 Board T
A
= 25¡C P
tot
225 mW
Derate above 25¡C 1.8 mW/¡C
Total Device Dissipation on Alumina Substrate, TA= 25¡C P
tot
300 mW
Derate above 25¡C 2.4 mW/¡C
Thermal Resistance
R
QJA
417
(1)
¡C/W
Junction to Ambient Air 556
(2)
Maximum Junction Temperature T
j
150 ¡C
Storage Temperature Range T
S
Ð55 to +150 ¡C
NOTES
(1) On Alumina Substrate
(2) On FR-5 Board
MMBD7000
DUAL SMALL SIGNAL SWITCHING DIODE
FEATURES
¨ Silicon Epitaxial Planar Diode
¨ Fast switching dual diode, especially
suited for automatic insertion.
MECHANICAL DATA
Case: SOT-23 (TO-236AB) Plastic Package
Weight: approx. 0.008 g
Marking Code: M5C
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified (per diode)
2/11/99
Dimensions in inches and (millimeters)
SOT-23
NEW PRODUCT NEW PRODUCT NEW PRODUCT
3
.037(0.95)
2
Top View
)
.056 (1.43
max. .004 (0.1)
)
.052 (1.33
.007 (0.175)
.005 (0.125)
.045 (1.15)
.102 (2.6)
.094 (2.4)
.037 (0.95)
.122 (3.1)
.118 (3.0)
.016 (0.4)
1
.037(0.95)
.016 (0.4) .016 (0.4)
MMBD7000
ELECTRICAL CHARACTERISTICS
SYMBOL MIN. MAX. UNIT
Reverse Breakdown Voltage at IR=100mAVBR100 - Volts
Leakage Current
at V
R
= 50 V I
R
- 1.0 mA
at V
R
= 100 V I
R
- 3.0 mA
at V
R
= 50 V, Tj = 125¡C I
R
- 100 mA
Forward Voltage
at I
F
= 1mA V
F
0.55 0.70 Volts
at I
F
= 10mA V
F
0.67 0.82 Volts
at I
F
= 100mA V
F
0.75 1.10 Volts
Capacitance
C
tot
- 1.5 pF
at V
R
= 0; f = 1MH
Z
Reverse Recovery Time
from I
F
= 10mA to IR= 10 mA t
rr
- 4.0 ns
measured at I
rr
= 1mA, RL= 100 W
Ratings at 25¡C ambient temperature unless otherwise specified (per diode).
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