General Semiconductor GI1104, GI1103, GI1102, GI1101 Datasheet

Reverse Voltage - 50 to 200 Volts Forward Current - 2.5 Amperes
0.034 (0.86)
0.028 (0.71) DIA.
0.150 (3.8)
0.100 (2.5) DIA.
1.0 (25.4) MIN.
0.240 (6.1)
MAX.
1.0 (25.4) MIN.
PATENTED*
Dimensions in inches and (millimeters)
*
Brazed lead assembly is covered by Patent No. 3,930,306
GI1101 THRU GI1104
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
FEATURES
DO-204AP
High temperature metallurgically bonded constructionGlass passivated cavity-free junctionSuperfast recovery time for high efficiencyLow forward voltage, high current capabilityCapable of meeting environmental standards
of MIL-S-19500
Hermetically sealed packageLow LeakageHigh surge capabilityHigh temperature soldering guaranteed:
350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-204AP solid glass body Terminals: Plated axial leads, solderable per MIL-STD 750,
Method 2026
Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.02 ounce, 0.56 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS GI1101 GI1102 GI1103 GI1104 UNITS
Maximum repetitive peak reverse voltage V Maximum RMS voltage V Maximum DC blocking voltage V Maximum average forward rectified current
0.375" (9.5mm) lead length
(SEE FIG.1)
RRM RMS
DC
I
(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed I on rated load (JEDEC Method) at rated T
L
Maximum instantaneous forward voltage at 2.0A
FSM
V
F
Maximum DC reverse current TA=25°C 2.0 10.0 at rated DC blocking voltage T
Maximum reverse recovery time Typical junction capacitance Typical thermal resistance
(NOTE 1)
(NOTE 2)
(NOTE 1)
(NOTE 4)
Operating junction and storage temperature range T
=100°C I
A
R
t
rr
C
J
R
ΘJA
R
ΘJL
, T
J
STG
50 100 150 200 Volts 35 70 105 140 Volts 50 100 150 200 Volts
2.5 2.0 Amps
50.0 Amps
0.975 1.25
(NOTE 5)
50.0 200.0 µA
25.0 50.0 ns
45.0 pF
65.0
20.0
-65 to +175 -65 to +150 °C
Volts
°C/W
NOTES:
(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MH (3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length and mounted on P.C.B.with 0.5 x 0.5” (12 x 12mm) copper pads (4) Thermal resistance from junction to lead at 0.375" (9.5mm) lead length with both leads attached to heat sinks (5) Tested at I
=1.0A
F
and applied reverse voltage of 4.0 Volts
Z
4/98
RATINGS AND CHARACTERISTIC CURVES GI1101 THRU GI1104
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0.1
1
10
50
110100
0
10
20
30
40
50
60
90
0.1
1
10
100
0
15
30
45
60
75
0 25 50 75 100 125 150 175
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
20
40
60 80
100
0.01
0.1
1
10
100
1,000
FIG. 1 - MAXIMUM FORWARD CURRENT
GI1101 - GI1103
GI1104
DERATING CURVE
RESISTIVE OR INDUCTIVE LOAD
0.8 x 0.8 x 0.04" THK (20 x 20 x 1.0mm) COPPER HEATSINKS
CURRENT, AMPERES
AVERAGE FORWARD RECTIFIED
0.375" (9.5mm) LEAD LENGTH
LEAD TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
T
L
L
TJ=25°C
PULSE WIDTH=300µs 1% DUTY CYCLE
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) at RATED T
L
AMPERES
PEAK FORWARD SURGE CURRENT,
NUMBER OF CYCLES AT 60 H
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
Z
TJ=125°C
AMPERES
INSTANTANEOUS FORWARD CURRENT,
JUNCTION CAPACITANCE, pF
INSTANTANEOUS FORWARD VOLTAGE,
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
VOLTS
TJ=25°C f=1.0 MH Vsig=50mVp-p
TJ=100°C
MICROAMPERES
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
TJ=25°C
PERCENT OF RATED PEAK REVERSE
Z
VOLTAGE, %
REVERSE VOLTA GE, VOLTS
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