General Semiconductor GFB75N03 Service Manual

Maximum Ratings and Thermal Characteristics(T

A

= 25°C unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage V

DS

30

V

Gate-Source Voltage V

GS

±

20

Continuous Drain Current

(1)

I

D

75

A

Pulsed Drain Current I

DM

240

Maximum Power Dissipation

T

A

= 25°C

P

D

62.5

W

TA= 100°C 25

Operating Junction and Storage Temperature Range TJ, T

stg

–55 to 150 °C

Lead Temperature (1/8” from case for 5 sec.) T

L

275 °C

Junction-to-Case Thermal Resistance R

θJC

2.0 °C/W

Junction-to-Ambient Thermal Resistance (PCB Mounted) R

θJA

62.5 °C/W

Note: (1) Maximum DC current limited by the package

GFB75N03

N-Channel Enhancement-Mode MOSFET

VDS30V R

DS(ON)

6.5mΩ ID75A

8/1/00

T

RENCH

G

EN

F

ET

TM

New Product

0.380 (9.65)

0.420 (10.67)

0.320 (8.13)

0.360 (9.14)

0.575 (14.60)

0.625 (15.88)

0.245 (6.22)
Min.

D

-T-

Seating Plate

0.027 (0.686)

0.037 (0.940)

0.095 (2.41)

0.100 (2.54)

GDS

PIN

0.160 (4.06)

0.190 (4.83)

0.045 (1.14)

0.055 (1.40)

0.090 (2.29)

0.110 (2.79)

0.047 (1.19)

0.055 (1.40)

0.018 (0.46)

0.025 (0.64)

0.080 (2.03)

0.110 (2.79)

Features

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low On-Resistance

• Specially Designed for Low Voltage DC/DC Converters

• Fast Switching for High Efficiency

• High temperature soldering in accordance with

CECC802/Reflow guaranteed

G

D

S

TO-263AB

Mechanical Data

Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,

Method 2026

Mounting Position: Any
Weight: 1.3g

Dimensions in inches and (millimeters)

0.08

(2.032)

0.04

(1.016)

0.24

(6.096)

0.42

(10.66)

0.63

(17.02)

0.12

(3.05)

0.33

(8.38)

Mounting Pad Layout

TO-263AB

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Electrical Characteristics(T

J

= 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit
Static

Drain-Source Breakdown Voltage BV

DSS

VGS= 0V, ID= 250µA30 ——V

Drain-Source On-State Resistance

(2)

R

DS(on)

VGS= 10V, ID= 38A — 5.8 6.5

mΩ

VGS= 4.5V, ID= 31A — 8.5 9.5

Gate Threshold Voltage V

GS(th)

VDS= VGS, ID= 250µA 1.0 — 3.0 V

Zero Gate Voltage Drain Current I

DSS

VDS= 30V, VGS= 0V ——1.0 µA

Gate-Body Leakage I

GSS

VGS= ±20V, VDS= 0V ——±100 nA

On-State Drain Current

(2)

I

D(on)

VDS≥ 5V, VGS= 10V 75 ——A

Forward Transconductance

(2)

g

fs

VDS= 15V, ID= 38A — 61 — S

Dynamic

Total Gate Charge Q

g

VDS=15V, ID=38A, VGS=5V — 32.5 46

— 63 90

Gate-Source Charge Q

gs

VDS= 15V, VGS= 10V

— 11 —

nC

Gate-Drain Charge Q

gd

ID= 38A

— 11 —

Turn-On Delay Time t

d(on)

— 13 26

Turn-On Rise Time t

r

VDD= 15V, RL= 15Ω

— 16 29

Turn-Off Delay Time t

d(off)

ID≅ 1A, V

GEN

= 10V

— 94 132

ns

Turn-Off Fall Time t

f

RG= 6Ω

— 38 57

Input Capacitance C

iss

— 3240 —

Output Capacitance C

oss

VDS= 15V, VGS= 0V

— 625 — pF

Reverse Transfer Capacitance C

rss

f = 1.0MH

Z

— 285 —

Source-Drain Diode

Max. Diode Forward Current I

S

———75 A

Diode Forward Voltage V

SD

IS= 38A, VGS= 0V — 0.9 1.3 V

Notes:

(1) Maximum DC current limited by

the package

(2) Pulse test; pulse width ≤ 300 µs,

duty cycle ≤ 2%

GFB75N03

N-Channel Enhancement-Mode MOSFET

G

D

S

VIN

VDD

VGS

RGEN

RL

VOUT

DUT

Input, VIN

t

d(on)

Output, VOUT

t

on

t

r

t

d(off)

t

off

t

f

INVERTED

90%

10%10%

90 %

50%

50%

10%

90%

PULSE WIDTH

Switching T est Circuit Switching Waveforms