General Semiconductor FESB8JT, FESB8HT, FESB8GT, FESB8FT, FESB8CT Datasheet

-T-

SEATING

PLATE

0.380 (9.65)

0.420 (10.67)

0.320 (8.13)

0.360 (9.14)

0.575 (14.60)

0.625 (15.88)

0.027 (0.686)

0.037 (0.940)

1

2

0.160 (4.06)

0.190 (4.83)

0.045 (1.14)

0.055 (1.40)

0.018 (0.46)

0.025 (0.64)

0.080 (2.03)

0.110 (2.79)

0.090 (2.29)

0.110 (2.79)

0.245 (6.22)
MIN

- HEATSINK

PIN 1

K

K

0.095 (2.41)

0.100 (2.54)

K

PIN 2

0.047 (1.19)

0.055 (1.40)

NEW PRODUCT NEW PRODUCT NEW PRODUCT

FESB8A T THRU FESB8JT

FAST EFFICIENT PLASTIC RECTIFIER

Reverse Volta ge - 50 to 600 Volts Forward Current - 8.0 Amperes

TO-263AB

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Glass passivated chip junction
♦ Low leakage, high voltage
♦ High surge current capability
♦ Superfast recovery time, for high efficiency
♦ High temperature soldering in accordance with

CECC 802 / Reflow guaranteed

MECHANICAL DATA

Case: JEDEC TO-263AB molded plastic body
Terminals: Plated lead solderable per MIL-STD-750,

Method 2026

Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Maximum recurrent peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

=100°C

at T

C

Peak forward surge current

8.3ms single half sine-wave superimposed I
on rated load (JEDEC Method)

Maximum instantaneous forward voltage at 8.0A V
Maximum DC reverse current T

at rated DC blocking voltage at T
Maximum reverse recovery time

Typical junction capacitance
Typical ther mal resistance
Operating junction and storage temperature range T

NOTES:

(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MH
(3) Thermal resistance from junction to case mounted on heatsink

and applied reverse voltage of 4.0 Volts

Z

(NOTE 3)

(NOTE 2)

=25°C 10.0

C

=100°C

C

(NOTE 1)

SYMBOLS 8AT 8BT 8CT 8DT 8FT 8GT 8HT 8JT UNITS

RRM
RMS

DC

I

(AV)

FSM

I

t

C

R

ΘJC

, T

J

FESB FESB FESB FESB FESB FESB FESB FESB

50 100 150 200 300 400 500 600 Volts
35 70 105 140 210 280 350 420 Volts
50 100 150 200 300 400 500 600 Volts

8.0 Amps

125.0 Amps

F

R

rr

J

0.95 1.3 1.5 Volts

500.0

35.0 50.0 ns

85.0 50.0 pF

3.0 °C/W

STG

-65 to +150 °C

µA

4/98

0 50 100 150

0

2.0

4.0

6.0

8.0

10

1 10 100

0

25

50

75

100

125

150

0.1 1 10 100

10

100

1,000

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

0.1

1.0

10

40

020406080100

0.01

0.1

1

10

100

RATINGS AND CHARACTERISTIC CURVES FESB8AT THRU FESB8JT

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVES

RESISTIVE OR
INDUCTIVE LOAD

HEATSINK, CASE TEMPERATURE, T

FREE AIR, AMBIENT, TEMPERATURE T

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

AMBIENT TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

TJ=125°C

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

TC=100°C

C

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)

A

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

Z

FIG. 4 - TYPICAL REVERSE LEAKAGE

CHARACTERISTICS

TJ=25°C

AMPERES

INSTANTANEOUS FORWARD CURRENT,

PULSE WIDTH=300µs
1% DUTY CYCLE

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

TJ=25°C
f=1.0 MHz
Vsig=50mVp-p

50 - 200V
300 - 400V
500 - 600V

=125°C

J

T

=100°C

J

T

MICROAMPERES

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

T

=25°C

J

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

50-400V
500-600V

JUNCTION CAPACITANCE, pF

50 - 400V
500 - 600V

REVERSE VOLTAGE, V OLTS