General Semiconductor FES16BT, FES16AT, FES16JT, FES16HT, FES16GT Datasheet

FES16A T THRU FES16JT

0.154 (3.91)

0.148 (3.74)

DIA.

0.113 (2.87)

0.103 (2.62)

0.185 (4.70)

0.175 (4.44)

0.055 (1.39)

0.045 (1.14)

0.145 (3.68)

0.135 (3.43)

0.350 (8.89)

0.330 (8.38)

0.160 (4.06)

0.140 (3.56)

0.037 (0.94)

0.027 (0.68)

0.205 (5.20)

0.195 (4.95)

0.560 (14.22)

0.530 (13.46)

0.022 (0.56)

0.014 (0.36)

0.110 (2.79)

0.100 (2.54)

12

1.148 (29.16)

1.118 (28.40)

0.105 (2.67)

0.095 (2.41)

0.410 (10.41)

0.390 (9.91)

0.635 (16.13)

0.625 (15.87)

0.560 (14.22)

0.530 (13.46)

PIN

PIN 1

PIN 2

CASE

0.415 (10.54) MAX.

0.370 (9.40)

0.360 (9.14)

FAST EFFICIENT PLASTIC RECTIFIER

Reverse Volta ge - 50 to 600 Volts Forward Current - 16.0 Amperes

TO-220AC

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Glass passivated chip junction
♦ Low power loss
♦ Low forward voltage, high current capability
♦ High surge current capability
♦ Superfast recovery time, for high efficiency
♦ High temperature soldering guaranteed:

250°C, 0.16" (4.06mm) from case for 10 seconds

MECHANICAL DATA

Case: JEDEC TO-220AC molded plastic body over

passivated chips
Terminals: Plated lead solderable per MIL-STD-750,
Method 2026

Polarity: As marked
Mounting Position: Any
Weight: 0.064 ounce, 1.81 grams

Maximum repetitive peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current

=100°C

at T

C

Peak forward surge current

8.3ms single half sine-wave superimposed I
on rated load (JEDEC Method) at T

=100°C

C

Maximum instantaneous forward voltage at 16A V
Maximum DC reverse current T

at rated DC blocking voltage T
Maximum reverse recovery time
Typical junction capacitance
Typical ther mal resistance

Operating and storage temperature range T

NOTES:
(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, I
(2) Measured at 1.0 MH
(3) Thermal resistance from junction to case and ambient mounted on heatsink

4/98

and applied reverse voltage of 4.0 Volts

Z

(NOTE 2)

(NOTE 3)

(NOTE1)

=25°C 10.0

C

=100°C

C

=0.25A

rr

SYMBOLS 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT UNITS

I

(AV)

R

R

, T

J

FES FES FES FES FES FES FES FES

RRM
RMS

50 100 150 200 300 400 500 600 Volts
35 70 105 140 210 280 350 420 Volts
50 100 150 200 300 400 500 600 Volts

DC

16.0 Amps

FSM

F

I

R

t

rr

C

J

ΘJA

ΘJC

0.975 1.3 1.5 Volts

35.0 50.0 ns

STG

250.0 Amps

500.0

175.0 145.0 pF

16.0

1.2

-65 to +150 °C

µA

°C/W

0 50 100 150

0

4.0

8.0

12

16

20

1 10 100

0

50

100

150

200

250

300

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

0.1

1

10

80

0.1 1 10 100

10

100

1,000

0 20 40 60 80 100

0.1

1

10

100

1,000

RATINGS AND CHARACTERISTICS CURVES FES16AT THRU FES16JT

FIG. 1 - FORWARD CURRENT DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

AMPERES

AVERAGE FORWARD CURRENT,

CASE TEMPERATURE, °C

FIG. 4 - TYPICAL INSTANTANEOUS FORWARD

CHARACTERISTICS

TJ=125°C

50-200V
300-400V
500-600V

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)
TC=100°C

AMPERES

PEAK FORWARD SURGE CURRENT,

NUMBER OF CYCLES AT 60 H

FIG. 3 - TYPICAL REVERSE CHARACTERISTICS

Z

INSTANTANEOUS FORWARD CURRENT, AMPERES

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - TYPICAL JUNCTION CAPACITANCE

TJ= 25°C
PULSE WIDTH = 300µs
1% DUTY CYCLE

TJ=25°C
f=1.0 MH

Z

Vsig=50mVp-p

MICROAMPERES

J

T

T

=100°C

=25°C

J

50-200V

300-600V

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

=25°C

J

T

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

JUNCTION CAPACITANCE, pF

50-400V

500-600V

REVERSE VOLTAGE, V OLTS