General Semiconductor ES3G, ES3F Datasheet

0.006 (0.152)

0.012 (0.305)

0.030 (0.76)

0.060 (1.52)

0.008 (0.203)

0.305 (7.75)

0.320 (8.13)

0.260 (6.60)

0.280 (7.11)

0.079 (2.06)

0.103 (2.62)

0.220 (5.59)

0.245 (6.22)

0.126 (3.20)

0.114 (2.90)

MAX.

NEW PRODUCT NEW PRODUCT NEW PRODUCT

ES3F AND ES3G

SURFACE MOUNT ULTRAFAST EFFICIENT PLASTIC RECTIFIER

Reverse Voltage - 300 to 400 Volts Forward Current - 3.0 Amperes

DO-214AB

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ For surface mount applications
♦ Low profile package
♦ Built-in strain relief
♦ Ideal for automated placement
♦ Easy pick and place
♦ Superfast recover y time for high efficiency
♦ Glass passivated chip junction
♦ High temperature soldering:

250°C/10 seconds at terminals

MECHANICAL DATA

Case: JEDEC DO-214AB molded plastic body over

passivated chip
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end

Dimensions in inches and (millimeters)

Weight: 0.007 ounces, 0.21 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Device marking code EF EG
Maximum repetitive peak reverse voltage V
Working peak reverse voltage V
Maximum RMS voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current at T

=100°C I

L

Peak forward surge current

8.3ms single half sine-wave superimposed on I
rated load (JEDEC Method) at T

=100°C

L

Maximum instantaneous forward voltage at 3.0A V
Maximum DC reverse current T

at working peak reverse voltage T
Maximum reverse recovery time
Maximum reverse recovery time
Maximum reverse recovery current
Maximum stored charge

(NOTE 2)

Typical junction capacitance
Typical thermal resistance

(NOTE 4)

(NOTE 1)
(NOTE 2)

(NOTE 3)

(NOTE 2)

=25°C 10.0

A

=100°C

A

Operating junction and storage temperature range T

SYMBOLS ES3F ES3G UNITS

300 400 Volts
225 300 Volts
210 280 Volts
300 400 Volts

3.0 Amps

100 Amps

1.10 Volts

350

35 ns
50 ns

3.0 Amps
50 ns
30 pF
50

15

-55 to +150 °C

R
R

, T

J

RRM

RWM

RMS

DC

(AV)

FSM

F

I

R

t

rr

t

rr

I

RM

Q

rr

C

J

ΘJA
ΘJL

STG

µA

°C/W

NOTES:
(1) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at I
(3) Measured at 1.0 MHZand applied reverse voltage of 4.0 Volts
(4) Units mounted on P.C.B. with 0.31 x 0.31” (8.0 x 8.0mm) copper pad areas

NOTICE: Advanced product information is subject to change without notice

4/98

=1.0A, di/dt=100A/µs, VR=30V, Irr=0.1I

F

RM

50

100

150

0

40

80

120

160

200

80 90 100 110 120 130 140 150

0

1.0

2.0

3.0

1

10

100

25

50

75

100

125

150

0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.01

0.1

1

10

100

0.1

1

10

100

1

175

100

0

20

40

60

80

100

0.01

0.1

1

10

100

1,000

125

25

75

RATING AND CHARACTERISTIC CURVES ES3F AND ES3G

FIG. 1 - MAXIMUM FORWARD CURRENT

DERATING CURVE

RESISTIVE OR INDUCTIVE LOAD

CURRENT, AMPERES

AVERAGE FORWARD RECTIFIED

LEAD TEMPERATURE, °C

FIG. 3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE

PEAK FORWARD SURGE CURRENT,

AMPERES

FIG. 2 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method) at TL=100°C

NUMBER OF CYCLES AT 60 H

FIG. 4 - TYPICAL REVERSE

Z

CHARACTERISTICS

TJ=125°C

TJ=100°C

AMPERES

INSTANTANEOUS FORWARD CURRENT,

RECOVER Y TIME nC/ns

RECOVERED STORED CHARGE/REVERSE

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

FIG. 5 - REVERSE SWITCHING

CHARACTERISTICS

@5A,50A/µs

@2A,20A/µs

@5A,50A/µs

@2A,20A/µs

@1A,100A/µs

@1A,100A/µs

MICROAMPERES

TJ=25°C

INSTANTANEOUS REVERSE LEAKAGE CURRENT,

PERCENT OF RATED PEAK REVERSE

VOLTAGE, %

FIG. 6 - TYPICAL JUNCTION CAPACITANCE

TJ=25°C
f=1.0 MH

Z

Vsig=50mVp-p

t

rr

Q

rr

JUNCTION CAPACITANCE, pF

JUNCTION TEMPERATURE, °C

REVERSE VOLT AGE, VOL TS